Semiconductor device and manufacturing method thereof

ABSTRACT

A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.

TECHNICAL FIELD

A technical field of the disclosed invention relates to a semiconductordevice including an oxide semiconductor and a manufacturing method ofthe semiconductor device. Note that semiconductor devices herein referto general elements and devices which function by utilizingsemiconductor characteristics.

BACKGROUND ART

A field-effect transistor is one of the most widely-used semiconductorelements. A variety of materials are used for field-effect transistorsaccording to their uses. In particular, semiconductor materialsincluding silicon are frequently used.

A field-effect transistor including silicon has characteristicssatisfying the needs for a variety of uses. For example, single crystalsilicon is used for an integrated circuit or the like which needs to beoperated at a high speed, whereby the need is satisfied. Further,amorphous silicon is used for an object which needs to have a largearea, such as a display device, whereby the need can be satisfied.

As described above, silicon is highly versatile and can be used forvarious purposes. However, in recent years, semiconductor materials havecome to be expected to have higher performance as well as versatility.For example, in terms of improving performance of a large-area displaydevice, in order to realize high-speed operation of a switching element,a semiconductor material which facilitates the increase in area of adisplay device and shows higher performance than amorphous silicon isneeded.

Under such conditions, a technique for a field-effect transistor (alsocalled an FET) including an oxide semiconductor has attracted attention.For example, Patent Document 1 discloses a transparent thin filmfield-effect transistor including a homologous compound InMO₃(ZnO)_(m)(M is In, Fe, Ga, or Al, and m is an integer greater than or equal to 1and less than 50).

In addition, Patent Document 2 discloses a field-effect transistor inwhich an amorphous oxide semiconductor which contains In, Ga, and Zn andhas an electron carrier density less than 10¹⁸/cm³ is used. Note that inthis patent document, the ratio of In atoms to Ga atoms and Zn atoms inthe amorphous oxide semiconductor is 1:1:m (m<6).

Further, Patent Document 3 discloses a field-effect transistor in whichan amorphous oxide semiconductor including a microcrystal is used for anactive layer.

REFERENCE

-   [Patent Document 1] Japanese Published Patent Application No.    2004-103957-   [Patent Document 2] PCT International Publication No. 05/088726-   [Patent Document 3] Japanese Published Patent Application No.    2006-165529

DISCLOSURE OF INVENTION

Patent Document 3 discloses that a composition in a crystal state isInGaO₃(ZnO)_(m) (m is an integer less than 6). Further, Patent Document3 discloses in Example 1 a case of InGaO₃(ZnO)₄. However, adequatecharacteristics have not been obtained in fact even when such oxidesemiconductors are used.

In view of the above-described problems, it is an object to provide asemiconductor device having a novel structure in which an oxidesemiconductor layer having a novel structure is used.

In an embodiment of the disclosed invention, a semiconductor device isformed using an oxide semiconductor layer which is purified and includesa crystalline region. The crystalline region is, for example, a regionhaving electrical anisotropy or a region which prevents entry of animpurity.

The following structures can be employed, for example.

An embodiment of the disclosed invention is a semiconductor device whichincludes an oxide semiconductor layer including a crystalline regionover an insulating surface, a source electrode layer and a drainelectrode layer in contact with the oxide semiconductor layer, a gateinsulating layer covering the oxide semiconductor layer, the sourceelectrode layer, and the drain electrode layer, and a gate electrodelayer over the gate insulating layer in a region overlapping with thecrystalline region. The crystalline region includes a crystal whosec-axis is aligned in a direction substantially perpendicular to asurface of the oxide semiconductor layer. Note that in thisspecification and the like, “substantially perpendicular” means beingwithin ±10° from a perpendicular direction.

Another embodiment of the disclosed invention is a semiconductor devicewhich includes a first gate electrode layer over an insulating surface,a first gate insulating layer covering the first gate electrode layer,an oxide semiconductor layer including a crystalline region over thefirst gate insulating layer, a source electrode layer and a drainelectrode layer in contact with the oxide semiconductor layer, a secondgate insulating layer covering the oxide semiconductor layer, the sourceelectrode layer, and the drain electrode layer, and a second gateelectrode layer over the second gate insulating layer in a regionoverlapping with the crystalline region. The crystalline region includesa crystal whose c-axis is aligned in a direction substantiallyperpendicular to a surface of the oxide semiconductor layer.

In addition, an insulating layer having a substantially same shape asthe source electrode layer and the drain electrode layer may be providedover the source electrode layer and the drain electrode layer. Note thatin this specification and the like, the expression “substantially thesame” or “substantially same” does not necessarily mean being exactlythe same in a strict sense and can mean being considered as the same.For example, a difference made by a single etching process isacceptable. Further, the thickness does not need to be the same.

In addition, a portion of the source electrode layer and the drainelectrode layer in contact with the oxide semiconductor layer mayinclude a material having low oxygen affinity.

A region other than the crystalline region in the oxide semiconductorlayer (e.g., a region other than a channel formation region) may have anamorphous structure.

The difference in height of the surface of the oxide semiconductor layermay be 1 nm or less in the region overlapping with the gate electrodelayer.

Another embodiment of the disclosed invention is a manufacturing methodof a semiconductor device, which includes the steps of: forming an oxidesemiconductor layer over an insulating surface; forming a conductivelayer over the oxide semiconductor layer; forming a source electrodelayer and a drain electrode layer by etching the conductive layer;forming a crystalline region having c-axis aligned in a directionsubstantially perpendicular to a surface of the oxide semiconductorlayer, by performing heat treatment; forming a gate insulating layer soas to cover the oxide semiconductor layer, the source electrode layer,and the drain electrode layer; and forming a gate electrode layer overthe gate insulating layer in a region overlapping with the crystallineregion.

Another embodiment of the disclosed invention is a manufacturing methodof a semiconductor device, which includes the steps of: forming a firstgate electrode layer over an insulating surface; forming a first gateinsulating layer so as to cover the first gate electrode layer; formingan oxide semiconductor layer over the first gate insulating layer;forming a conductive layer over the oxide semiconductor layer; forming asource electrode layer and a drain electrode layer by etching theconductive layer; forming a crystalline region having c-axis aligned ina direction substantially perpendicular to a surface of the oxidesemiconductor layer, by performing heat treatment; forming a second gateinsulating layer so as to cover the oxide semiconductor layer, thesource electrode layer, and the drain electrode layer; and forming asecond gate electrode layer over the second gate insulating layer in aregion overlapping with the crystalline region.

In the above embodiment, the heat treatment may be performed at atemperature higher than or equal to 550° C. and lower than or equal to850° C., preferably higher than or equal to 550° C. and lower than orequal to 750° C. When the conductive layer is etched, a part of theoxide semiconductor layer may be removed. An insulating layer having asubstantially same shape as the source electrode layer and the drainelectrode layer may be formed over the source electrode layer and thedrain electrode layer.

A portion of the source electrode layer and the drain electrode layer incontact with the oxide semiconductor layer may be formed using amaterial having low oxygen affinity.

An oxide semiconductor layer having an amorphous structure may be formedas the oxide semiconductor layer, and the amorphous structure may remainin a region other than the crystalline region (e.g., a region other thana channel formation region).

Note that the term such as “over” or “below” in this specification andthe like does not necessarily mean that a component is placed “directlyon” or “directly under” another component. For example, the expression“a gate electrode layer over a gate insulating layer” does not excludethe case where a component is placed between the gate insulating layerand the gate electrode layer. Moreover, the terms such as “over” and“below” are used only for convenience of description and can include thecase where the vertical relation of components is reversed, unlessotherwise specified

In addition, the term such as “electrode” or “wiring” in thisspecification and the like does not limit a function of a component. Forexample, an “electrode” can be used as part of a “wiring”, and the“wiring” can be used as part of the “electrode”. Furthermore, the term“electrode” or “wiring” can include the case where a plurality of“electrodes” or “wirings” is formed in an integrated manner.

Functions of a “source” and a “drain” are sometimes interchanged witheach other when a transistor of opposite polarity is used or when thedirection of current flowing is changed in circuit operation, forexample. Therefore, the terms “source” and “drain” can be used to denotethe drain and the source, respectively, in this specification.

Note that the term “electrically connected” in this specification andthe like includes the case where components are connected through an“object having any electric function”. There is no particular limitationon an object having any electric function as long as electric signalscan be transmitted and received between components that are connectedthrough the object.

Examples of an “object having any electric function” are a switchingelement such as a transistor, a resistor, an inductor, a capacitor, andan element with a variety of functions as well as an electrode and awiring.

In an embodiment of the disclosed invention, a purified oxidesemiconductor layer is used for a semiconductor device. The purificationmeans at least one of removing hydrogen, which causes an oxidesemiconductor to change to an n-type oxide semiconductor, from the oxidesemiconductor layer as much as possible and reducing defects, which arecaused by oxygen deficiency in the oxide semiconductor layer, by supplyof oxygen that the oxide semiconductor layer lacks.

The purification is conducted in order to obtain an intrinsic (i-type)oxide semiconductor layer. Since an oxide semiconductor generally hasn-type conductivity, the off-state current is high. When the off-statecurrent is high, switching characteristics are insufficient, which isnot appropriate for semiconductor devices. Therefore, an oxidesemiconductor layer is purified to change to an i-type or substantiallyi-type oxide semiconductor layer.

In an embodiment of the disclosed invention, an oxide semiconductorlayer including a crystalline region is used in a semiconductor device.

Electrical characteristics are different between an oxide semiconductorlayer including a crystalline region having electrical anisotropy and anoxide semiconductor layer without a crystalline region. For example, inan oxide semiconductor layer including a crystalline region havingc-axis aligned in a direction substantially perpendicular to a surfaceof the oxide semiconductor layer, conductivity in a direction parallelto the surface of the oxide semiconductor layer is increased and aninsulating property in a direction perpendicular to the surface of theoxide semiconductor layer is increased.

Thus, when the oxide semiconductor layer including a crystalline regionis used for a semiconductor device, the semiconductor device can haveexcellent electrical characteristics.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A and 1B are cross-sectional views each illustrating asemiconductor device.

FIG. 2 is a cross-sectional view of a transistor including an oxidesemiconductor.

FIG. 3 is an energy band diagram (schematic diagram) of an A-A′ sectionin FIG. 2.

FIG. 4A illustrates a state in which a positive voltage (V_(G)>0) isapplied to a gate (GE1), and FIG. 4B illustrates a state in which anegative voltage (V_(G)<0) is applied to the gate (GE1).

FIG. 5 is a diagram illustrating the relationships between the vacuumlevel and the work function of a metal (φ_(m)) and between the vacuumlevel and the electron affinity (χ) of an oxide semiconductor.

FIG. 6 illustrates energy required for hot carrier injection in silicon(Si).

FIG. 7 illustrates energy required for hot carrier injection in anIn—Ga—Zn—O-based oxide semiconductor (IGZO).

FIG. 8 shows results of device simulation as to the short-channeleffect.

FIG. 9 shows results of device simulation as to the short-channeleffect.

FIG. 10 shows C-V (capacitance-voltage) characteristics.

FIG. 11 shows the relationship between V_(G) and (1/C)².

FIGS. 12A to 12D are cross-sectional views illustrating a manufacturingprocess of a semiconductor device.

FIGS. 13A to 13D are cross-sectional views illustrating a manufacturingprocess of a semiconductor device.

FIGS. 14A to 14C are cross-sectional views each illustrating asemiconductor device.

FIGS. 15A to 15C are cross-sectional views each illustrating asemiconductor device.

FIG. 16 is a diagram illustrating a semiconductor device.

FIGS. 17A and 17B are cross-sectional views each illustrating asemiconductor device.

FIGS. 18A to 18C are cross-sectional views illustrating a manufacturingprocess of a semiconductor device.

FIGS. 19A to 19C are cross-sectional views illustrating a manufacturingprocess of a semiconductor device.

FIGS. 20A to 20D are cross-sectional views illustrating a manufacturingprocess of a semiconductor device.

FIGS. 21A to 21C are cross-sectional views each illustrating asemiconductor device.

FIGS. 22A to 22C are cross-sectional views each illustrating asemiconductor device.

FIGS. 23A to 23F each illustrate an electronic device including asemiconductor device.

BEST MODE FOR CARRYING OUT THE INVENTION

Examples of embodiments of the present invention will be described belowwith reference to the drawings. Note that the present invention is notlimited to the following description and it will be readily appreciatedby those skilled in the art that the modes and details of the presentinvention can be modified in various ways without departing from thespirit and the scope thereof. Therefore, the present invention shouldnot be construed as being limited to the description in the followingembodiments.

Note that the position, size, range, or the like of each componentillustrated in drawings and the like is not accurately represented insome cases for easy understanding. Therefore, the disclosed invention isnot necessarily limited to the position, size, range, or the like asdisclosed in the drawings and the like.

Note that ordinal numbers such as “first”, “second”, and “third” in thisspecification and the like are used in order to avoid confusion amongcomponents, and the terms do not limit the components numerically.

Embodiment 1

In this embodiment, a structure and a manufacturing method of asemiconductor device according to one embodiment of the disclosedinvention will be described with reference to FIGS. 1A and 1B, FIG. 2,FIG. 3, FIGS. 4A and 4B, FIGS. 5 to 11, FIGS. 12A to 12D, FIGS. 13A to13D, FIGS. 14A to 14C, FIGS. 15A to 15C, and FIG. 16.

<Structure of Semiconductor Device>

FIGS. 1A and 1B are cross-sectional views each illustrating a transistor150 which is an example of a structure of a semiconductor device. Notethat the transistor 150 is an n-channel transistor here; alternatively,a p-channel transistor may be used.

The transistor 150 includes an oxide semiconductor layer 106 a providedover a substrate 100 with an insulating layer 102 interposedtherebetween, a crystalline region 110 in the oxide semiconductor layer106 a, a source or drain electrode layer 108 a and a source or drainelectrode layer 108 b electrically connected to the oxide semiconductorlayer 106 a, a gate insulating layer 112 covering the oxidesemiconductor layer 106 a, the source or drain electrode layer 108 a,and the source or drain electrode layer 108 b, and a gate electrodelayer 114 over the gate insulating layer 112 (see FIGS. 1A and 1B).Here, FIG. 1A illustrates the case where the source or drain electrodelayer 108 a and the source or drain electrode layer 108 b have a stackedstructure, and FIG. 1B illustrates the case where the source or drainelectrode layer 108 a and the source or drain electrode layer 108 b havea single-layer structure. Note that in the case of a single-layerstructure, it is easy to realize a favorable tapered shape.

In addition, an interlayer insulating layer 116 and an interlayerinsulating layer 118 are provided over the transistor 150. Note that theinterlayer insulating layer 116 and the interlayer insulating layer 118are not essential components and therefore may be omitted asappropriate.

For the oxide semiconductor layer 106 a, any of the following materialsis used: four-component metal oxide such as an In—Sn—Ga—Zn—O-basedmaterial; three-component metal oxide such as an In—Ga—Zn—O-basedmaterial, an In—Sn—Zn—O-based material, an In—Al—Zn—O-based material, aSn—Ga—Zn—O-based material, an Al—Ga—Zn—O-based material, and aSn—Al—Zn—O-based material; two-component metal oxide such as anIn—Zn—O-based material, a Sn—Zn—O-based material, an Al—Zn—O-basedmaterial, a Zn—Mg—O-based material, a Sn—Mg—O-based material, and anIn—Mg—O-based material; single-component metal oxide such as anIn—O-based material, a Sn—O-based material, and a Zn—O-based material;and the like.

In particular, an In—Ga—Zn—O-based oxide semiconductor material hassufficiently high resistance when there is no electric field and thusoff-state current can be sufficiently reduced. In addition, also havinghigh field-effect mobility, the In—Ga—Zn—O-based oxide semiconductormaterial is suitable for a semiconductor material used in asemiconductor device.

As a typical example of the In—Ga—Zn—O-based oxide semiconductormaterial, an oxide semiconductor material represented by InGaO₃(ZnO)_(m)(m>0) is given. Using M instead of Ga, there is an oxide semiconductormaterial represented by InMO₃(ZnO)_(m) (m>0). Here, M denotes one ormore metal elements selected from gallium (Ga), aluminum (Al), iron(Fe), nickel (Ni), manganese (Mn), cobalt (Co), and the like. Forexample, M may be Ga, Ga and Al, Ga and Fe, Ga and Ni, Ga and Mn, Ga andCo, or the like. Note that the above-described compositions are derivedfrom the crystal structures that the oxide semiconductor material canhave and are mere examples.

The oxide semiconductor layer 106 a is preferably an oxide semiconductorlayer which is purified by sufficiently removing an impurity such ashydrogen therefrom and supplying oxygen thereto. Specifically, thehydrogen concentration of the oxide semiconductor layer 106 a is5×10¹⁹/cm³ or less, preferably 5×10¹⁸/cm³ or less, more preferably5×10¹⁷/cm³ or less. Note that the oxide semiconductor layer 106 a whichis purified by sufficiently reducing hydrogen concentration andsupplying oxygen has a carrier density (e.g., less than 1×10¹²/cm³,preferably less than 1.45×10¹⁰/cm³) which is sufficiently lower thanthat of silicon to which an impurity element is added (approximately1×10¹⁴/cm³). The transistor 150 with excellent off-state currentcharacteristics can be obtained with the use of such an i-type orsubstantially i-type oxide semiconductor. For example, when the drainvoltage V_(D) is +1 V or +10 V and the gate voltage V_(G) is set in therange of from −5 V to −20 V, the off-state current is 1×10⁻¹³ A or less.Note that the above hydrogen concentration of the oxide semiconductorlayer 106 a is measured by secondary ion mass spectrometry (SIMS).

Here, the oxide semiconductor layer 106 a includes the crystallineregion 110. The region corresponds to a region including a surface ofthe oxide semiconductor layer 106 a, in other words, a region includinga portion in contact with the gate insulating layer 112.

The crystalline region 110 preferably includes a crystal whose c-axis isaligned in a direction substantially perpendicular to the surface of theoxide semiconductor layer 106 a. For example, the crystalline region 110may be a region including a crystal grain whose c-axis is aligned in adirection substantially perpendicular to the surface of the oxidesemiconductor layer 106 a. Here, “substantially perpendicular” meansbeing within ±10° from a perpendicular direction. Note that thecrystalline region 110 may be formed only in the vicinity of the surfaceof the oxide semiconductor layer 106 a (e.g., a region extending fromthe surface to a distance (depth) of 10 nm or less) or may be formed toreach the rear surface of the oxide semiconductor layer 106 a.

In addition, the crystalline region 110 preferably includes a plate-likecrystal. Here, the plate-like crystal means a crystal that is grown in aplanar manner and has a shape like a thin plate. In addition, thethickness of the crystalline region is preferably 2 nm to 10 nm.

Note that the oxide semiconductor layer 106 a may have any of anamorphous structure and non-single-crystal structures (including amicrocrystalline structure, a polycrystalline structure, and the like)including the above material. On the other hand, the crystalline region110 preferably has a non-single-crystal structure or the like. It ispreferable that at least the crystalline region 110 have highercrystallinity than the other region in the oxide semiconductor layer 106a.

By including the crystalline region 110 as described above, the oxidesemiconductor layer 106 a can have electrical anisotropy.

Note that the surface of the oxide semiconductor layer 106 a preferablyhas at least a predetermined degree of planarity in a channel formationregion (a region overlapping with the gate electrode layer). Forexample, the difference in height of the surface of the oxidesemiconductor layer 106 a is 1 nm or less (preferably, 0.2 nm or less)in the channel formation region. When the crystalline region 110 of theoxide semiconductor layer 106 a is formed with a polycrystal or thelike, in some cases, adjacent crystal grains do not have identical a-bplanes. In other words, in some cases, there is a difference betweenlayers parallel to the a-axis and the b-axis of crystal grains. Such adifference may cause a decrease in electrical conductivity. Therefore,in the channel formation region, layers parallel to the a-axis and theb-axis are preferably identical.

As described above, with the use of the oxide semiconductor layer 106 awhich is purified and includes the crystalline region 110, asemiconductor device having favorable electrical characteristics can berealized.

In addition, the crystalline region 110 is stable as compared to theother region in the oxide semiconductor layer 106 a, and thus canprevent entry of an impurity (e.g., moisture or the like) into the oxidesemiconductor layer 106 a. Therefore, the reliability of the oxidesemiconductor layer 106 a can be improved. In addition, because thecrystalline region 110 is stable as compared to the other region in theoxide semiconductor layer 106 a, with the use of this portion as achannel formation region, stable transistor characteristics can beobtained.

Hereinafter, the meaning of purification of an oxide semiconductor tocause the oxide semiconductor to be an intrinsic (i-type) oxidesemiconductor, an advantage of using an oxide semiconductor in asemiconductor device, and the like will be briefly described.

<Realization of Intrinsic Oxide Semiconductor>

Considerable research has been done on properties of oxidesemiconductors, such as the density of states (DOS); however, theresearch does not include the idea of sufficiently reducing defectivestates themselves. According to an embodiment of the disclosedinvention, a purified, intrinsic (i-type) oxide semiconductor ismanufactured by removing water or hydrogen, which might be a cause of anincrease in the DOS, from the oxide semiconductor. This is based on theidea of sufficiently reducing the DOS itself. Thus, excellent industrialproducts can be manufactured.

Note that oxygen may be removed while hydrogen, water, or the like isbeing removed. Therefore, it is preferable to realize a furtherpurified, intrinsic (i-type) oxide semiconductor in such a manner thatoxygen is supplied to metal dangling bonds generated by oxygendeficiency so that the DOS due to oxygen deficiency is reduced. Forexample, an oxygen-excess oxide film is formed in close contact with achannel formation region and heat treatment is performed at atemperature of approximately 200° C. to 400° C., typically 250° C.,whereby oxygen can be supplied from the oxide film and the DOS due tooxygen deficiency can be reduced. An inert gas may be switched to a gasincluding oxygen during the first to third heat treatments to bedescribed below. Further, after the first to third heat treatments,oxygen can be supplied to the oxide semiconductor through a temperaturedecreasing process in an oxygen atmosphere or an atmosphere in whichhydrogen, water, or the like is sufficiently reduced.

It can be considered that a factor causing deterioration ofcharacteristics of an oxide semiconductor is a shallow level due toexcess hydrogen at 0.1 eV to 0.2 eV below the conduction band, a deeplevel due to oxygen deficiency, or the like. The technical idea thathydrogen is thoroughly eliminated and oxygen is adequately supplied inorder to eliminate such a defect would be right.

An oxide semiconductor is generally considered as an n-typesemiconductor; however, according to an embodiment of the disclosedinvention, an i-type oxide semiconductor is realized by removing animpurity such as water or hydrogen and supplying oxygen which is aconstituent element of the oxide semiconductor. In this respect, it canbe said that an embodiment of the disclosed invention includes a noveltechnical idea because it is not an i-type semiconductor such as siliconwhich is obtained by adding an impurity element.

<Advantage in Process Over Other Semiconductor Materials>

As a semiconductor material that can be compared to an oxidesemiconductor, silicon carbide (e.g., 4H—SiC) or the like can be given.An oxide semiconductor and 4H—SiC have some common features. The carrierdensity is one example thereof. In accordance with Fermi-Diracdistribution, the density of minority carriers in an oxide semiconductoris estimated to be approximately 10⁻⁷/cm³. This value of the minoritycarrier density is extremely small in a manner similar to that of4H—SiC, which is 6.7×10⁻¹¹/cm³. In comparison with the intrinsic carrierdensity of silicon (approximately 1.45×10¹⁰/cm³), it can be wellunderstood that the degree is significantly low.

In addition, the energy band gap of the oxide semiconductor is 3.0 eV to3.5 eV, and the energy band gap of 4H—SiC is 3.26 eV. Therefore, anoxide semiconductor and silicon carbide are similar in that they areboth wide bandgap semiconductors.

On the other hand, there is a significant difference between an oxidesemiconductor and silicon carbide, that is, the process temperature. Ingeneral, heat treatment at 1500° C. to 2000° C. is required when usingsilicon carbide. At such a high temperature, a semiconductor substrate,a semiconductor element, or the like is damaged, and thus, it isdifficult to form a semiconductor element using silicon carbide over asemiconductor element using a semiconductor material other than siliconcarbide. On the other hand, an oxide semiconductor can be obtainedthrough heat treatment at 850° C. or lower, preferably 750° C. or lower.Therefore, it is possible to form a semiconductor element using an oxidesemiconductor after forming an integrated circuit using anothersemiconductor material.

In the case of using an oxide semiconductor, there is an advantage thatit is possible to use a substrate having low heat resistance such as aglass substrate, which is different from the case where silicon carbideis used. Moreover, there is also an advantage that high-temperature heattreatment is not required so that energy cost can be reducedsufficiently as compared to silicon carbide. Further, in siliconcarbide, a crystal defect or a small amount of impurities which isintroduced into the silicon carbide without intention is a factorcausing carriers to be generated. In theory, a low carrier densityequivalent to that of the oxide semiconductor of the present inventioncan be obtained in the case of silicon carbide; however, it ispractically difficult to obtain a carrier density less than 10¹²/cm³ forthe reasons given above. The same applies to a comparison between theoxide semiconductor and gallium nitride which is also known as a widebandgap semiconductor.

<Electrical Conduction Mechanism of Transistor Including OxideSemiconductor>

An electrical conduction mechanism of a transistor including an oxidesemiconductor will be described with reference to FIG. 2, FIG. 3, FIGS.4A and 4B, and FIG. 5. Note that the following description is based onthe assumption of an ideal situation for easy understanding and does notnecessarily reflect a real situation. Note also that the followingdescription is just a consideration.

FIG. 2 is a cross-sectional view of a transistor (thin film transistor)including an oxide semiconductor. An oxide semiconductor layer (OS) isprovided over a gate electrode (GE1) with a gate insulating layer (GI)interposed therebetween. A source electrode (S) and a drain electrode(D) are provided thereover. An insulating layer is provided so as tocover the source electrode (S) and the drain electrode (D).

FIG. 3 is an energy band diagram (schematic diagram) of the A-A′ sectionin FIG. 2. In FIG. 3, a black circle () and a white circle (◯)represent an electron and a hole and have electric charges (−q, +q),respectively. With a positive voltage (V_(D)>0) applied to the drainelectrode, the dashed line shows the case where no voltage is applied tothe gate electrode (V_(G)=0) and the solid line shows the case where apositive voltage is applied to the gate electrode (V_(G)>0). In the casewhere no voltage is applied to the gate electrode, carriers (electrons)are not injected to the oxide semiconductor side from an electrodebecause of high potential barrier, so that a current does not flow,which means an off state. On the other hand, when a positive voltage isapplied to the gate electrode, potential barrier is lowered, and thus acurrent flows, which means an on state.

FIGS. 4A and 4B are energy band diagrams (schematic diagrams) of theB-B′ section in FIG. 2. FIG. 4A illustrates an on state in which apositive voltage (V_(G)>0) is applied to the gate electrode (GE1) andcarriers (electrons) flow between the source electrode and the drainelectrode. FIG. 4B illustrates an off state in which a negative voltage(V_(G)<0) is applied to the gate electrode (GE1) and minority carriersdo not flow.

FIG. 5 illustrates the relationships between the vacuum level and thework function of a metal (φ_(m)) and between the vacuum level and theelectron affinity (χ) of an oxide semiconductor.

At normal temperature, electrons in the metal are degenerated and theFermi level is located in the conduction band. On the other hand, aconventional oxide semiconductor is an n-type oxide semiconductor, inwhich the Fermi level (E_(F)) is away from the intrinsic Fermi level(E_(i)) located in the middle of a band gap and is located closer to theconduction band. Note that it is known that part of hydrogen is a donorin an oxide semiconductor and is one factor causing an oxidesemiconductor to be an n-type oxide semiconductor.

On the other hand, an oxide semiconductor according to one embodiment ofthe disclosed invention is an intrinsic (i-type) or substantiallyintrinsic oxide semiconductor which is obtained by removing hydrogenthat is a factor for an n-type oxide semiconductor from an oxidesemiconductor, and purifying the oxide semiconductor such that anelement other than a main component of the oxide semiconductor (i.e., animpurity element) is prevented from being contained therein as much aspossible. In other words, a feature is that a purified i-type(intrinsic) semiconductor, or a semiconductor close thereto, is obtainednot by adding an impurity element but by removing an impurity such ashydrogen or water as much as possible. Thus, the Fermi level (E_(F)) canbe comparable with the intrinsic Fermi level (E_(i)).

It is said that the band gap (E_(g)) of an oxide semiconductor is 3.15eV and the electron affinity (χ) is 4.3 V. The work function of titanium(Ti) included in the source electrode and the drain electrode issubstantially equal to the electron affinity (χ) of the oxidesemiconductor. In that case, a Schottky barrier for electrons is notformed at an interface between the metal and the oxide semiconductor.

At that time, the electron moves in the vicinity of the interfacebetween the gate insulating layer and the purified oxide semiconductor(the lowest portion of the oxide semiconductor which is stable in termsof energy) as illustrated in FIG. 4A.

In addition, as illustrated in FIG. 4B, when a negative potential isapplied to the gate electrode (GE1), the value of current is extremelyclose to zero because holes that are minority carriers are substantiallyzero.

In such a manner, an intrinsic (i-type) or substantially intrinsic oxidesemiconductor is obtained by being purified such that an element otherthan its main element (i.e., an impurity element) is contained as littleas possible. Thus, characteristics of the interface between the oxidesemiconductor and the gate insulating layer become obvious. For thatreason, the gate insulating layer needs to be able to form a favorableinterface with the oxide semiconductor. Specifically, it is preferableto use, for example, an insulating layer formed by a CVD method usinghigh-density plasma generated with a power supply frequency in the rangeof the VHF band to the microwave band, an insulating layer formed by asputtering method, or the like.

When the oxide semiconductor is purified and the interface between theoxide semiconductor and the gate insulating layer is made favorable, inthe case where the transistor has a channel width (W) of 1×10⁴ μm and achannel length (L) of 3 μm, for example, it is possible to realizecharacteristics such as an off-state current of 10⁻¹³ A or less and asubthreshold swing (S value) of 0.1 V/dec (with a 100 nm thick gateinsulating layer).

The oxide semiconductor is purified as described above so as to containan element other than its main element (i.e., an impurity element) aslittle as possible, so that the thin film transistor can operate in afavorable manner.

<Resistance of Transistor Including Oxide Semiconductor to Hot CarrierDegradation>

Next, the resistance of a transistor including an oxide semiconductor tohot carrier degradation will be described with reference to FIG. 6 andFIG. 7. Note that the following description is based on the assumptionof an ideal situation for easy understanding and does not necessarilyreflect a real situation. Note also that the following description isjust a consideration.

Main causes of hot carrier degradation are channel hot electroninjection (CHE injection) and drain avalanche hot carrier injection(DAHC injection). Note that only electrons are considered below forsimplicity.

CHE injection refers to a phenomenon in which electrons having gainedenergy higher than the barrier of a gate insulating layer in asemiconductor layer are injected into the gate insulating layer or thelike. Electrons gain energy by being accelerated by a low electricfield.

DAHC injection refers to a phenomenon in which electrons generated bycollision of electrons accelerated by a high electric field are injectedto a gate insulating layer or the like. A difference between DAHCinjection and CHE injection is whether or not they involve avalanchebreakdown caused by impact ionization. Note that DAHC injection requireselectrons having a kinetic energy higher than or equal to a band gap ofa semiconductor.

FIG. 6 and FIG. 7 illustrate energy required for each hot carrierinjection which is estimated from the band structure of silicon (Si) andan In—Ga—Zn—O-based oxide semiconductor (IGZO). FIG. 6 and FIG. 7 showCHE injection on the left side and DAHC injection on the right side.

Regarding silicon, degradation caused by DAHC injection is more seriousthan that caused by CHE injection. This results from the fact thatsilicon has a narrow band gap and avalanche breakdown readily occurstherein. Because carriers (e.g., electrons) which are acceleratedwithout colliding are very few in silicon, the probability of CHEinjection is therefore low. On the other hand, avalanche breakdownincreases the number of electrons capable of travelling over the barrierof the gate insulating layer, and this increases the number of electronsinjected to the gate insulating layer.

Regarding an In—Ga—Zn—O-based oxide semiconductor, the energy requiredfor CHE injection does not greatly differ from that in the case ofsilicon, and the energy required for DAHC injection is substantiallyequal to the energy required for CHE injection due to a wide band gap.In other words, the probability of DAHC injection is low.

On the other hand, like silicon, carriers (e.g., electrons) which areaccelerated without colliding are very few, and the probability of CHEinjection is therefore also low. In other words, an In—Ga—Zn—O-basedoxide semiconductor has higher resistance to hot carrier degradationthan silicon.

<Short-Channel Effect in Transistor Including Oxide Semiconductor>

Next, a short-channel effect in a transistor including an oxidesemiconductor will be described with reference to FIG. 8 and FIG. 9.Note that the following description is based on the assumption of anideal situation for easy understanding and does not necessarily reflecta real situation. Note also that the following description is just aconsideration.

The short-channel effect refers to degradation of electricalcharacteristics which becomes obvious with miniaturization of atransistor (a reduction in channel length (L)). The short-channel effectresults from the effect of a drain on a source. Specific examples of theshort-channel effect are a decrease in threshold voltage, an increase insubthreshold swing (S value), an increase in leakage current, and thelike.

Here, a structure capable of suppressing a short-channel effect isexamined by device simulation. Specifically, four kinds of models eachhaving a different carrier density and a different thickness of an oxidesemiconductor layer were prepared, and the relationship between achannel length (L) and a threshold voltage (V_(th)) was checked. As themodels, bottom-gate transistors were employed, in each of which thecarrier density was 1.7×10⁻⁸/cm³ or 1.0×10¹⁵/cm³ and an oxidesemiconductor layer had a thickness of 1 μm or 30 nm. Note that anIn—Ga—Zn—O-based oxide semiconductor was used for the oxidesemiconductor layer, and a silicon oxynitride film with a thickness of100 nm was used as a gate insulating layer.

Note that there is no significant difference in calculation resultsbetween a top-gate transistor and a bottom-gate transistor.

FIG. 8 and FIG. 9 show calculation results. FIG. 8 shows the case wherethe carrier density is 1.7×10⁻⁸/cm³ and FIG. 9 shows the case where thecarrier density is 1.0×10¹⁵/cm³. The results show that a short-channeleffect can be suppressed in a transistor including an oxidesemiconductor by a reduction in thickness of an oxide semiconductorlayer. For example, in the case where the channel length isapproximately 1 μm, even with an oxide semiconductor layer havingsufficiently low carrier density, it can be understood that ashort-channel effect can be sufficiently suppressed when the thicknessof the oxide semiconductor layer is set to approximately 3 nm to 50 nm,preferably, 3 nm to 20 nm.

<Carrier Density of Oxide Semiconductor>

A technical idea according to the disclosed invention is to make anoxide semiconductor layer as close as possible to an intrinsic (i-type)oxide semiconductor layer by sufficiently reducing the carrier densitythereof. A method for calculating the carrier density and an actuallymeasured carrier density of an oxide semiconductor layer will bedescribed with reference to FIG. 10 and FIG. 11.

The carrier density of an oxide semiconductor layer can be obtained insuch a manner that a MOS capacitor including an oxide semiconductorlayer is manufactured and the results of C-V (capacitance-voltage)measurement (C-V characteristics) of the MOS capacitor are evaluated.

The carrier density is measured according to the following steps (1) to(3): (1) to obtain C-V characteristics by plotting the relation betweenthe gate voltage V_(g) and capacitance C of the MOS capacitor; (2) toobtain a graph showing the relation between the gate voltage V_(g) and(1/C)² with the use of the C-V characteristics, and to obtain adifferential value of (1/C)² in a weak inversion region in the graph;and (3) to substitute the differential value obtained into Formula 1,which is shown below, representing the carrier density (N_(d)). Notethat e, ε₀, and ε in Formula 1 represent elementary electric charge,vacuum permittivity, and relative permittivity of an oxidesemiconductor, respectively.

$\begin{matrix}{N_{d} = {{- ( \frac{2}{e\; ɛ_{0}ɛ} )}\text{/}\frac{( {1\text{/}C} )^{2}}{V}}} & \lbrack {{Formula}\mspace{14mu} 1} \rbrack\end{matrix}$

As a sample used for the measurement, a MOS capacitor having thefollowing structure was used. The MOS capacitor includes a 300 nm thicktitanium layer over a glass substrate, a 100 nm thick titanium nitridelayer over the titanium layer, a 2 μm thick oxide semiconductor layerincluding an In—Ga—Zn—O-based oxide semiconductor (a-IGZO) over thetitanium nitride layer, a 300 nm thick silicon oxynitride layer over theoxide semiconductor layer, and a 300 nm thick silver layer over thesilicon oxynitride layer.

Note that the oxide semiconductor layer was formed using a target fordepositing an oxide semiconductor including In, Ga, and Zn(In:Ga:Zn=1:1:0.5 [atomic ratio]) by a sputtering method. Further, anatmosphere in which the oxide semiconductor layer was formed was a mixedatmosphere of argon and oxygen (with a flow ratio of Ar:O₂=30 (sccm):15(sccm)).

FIG. 10 and FIG. 11 show the C-V characteristics and the relationshipbetween V_(g) and (1/C)², respectively. The carrier density calculatedusing Formula 1 from the differential value of (1/C)² in a weakinversion region of the graph of FIG. 11 was 6.0×10¹⁰/cm³.

In this manner, by using an i-type or substantially i-type oxidesemiconductor (for example, with a carrier density of less than1×10¹²/cm³, preferably less than 1.45×10¹⁰/cm³), a transistor withexcellent off-state current characteristics can be obtained.

As described above, it can be understood that a variety of advantageouseffects can be obtained when an oxide semiconductor, particularly, apurified intrinsic oxide semiconductor is used. In addition, when anintrinsic oxide semiconductor layer having a crystalline structure isrealized as in the disclosed invention, a novel semiconductor devicehaving excellent characteristics is realized.

<Manufacturing Method of Semiconductor Device>

Next, a manufacturing method of the transistor 150 which is an exampleof a structure of a semiconductor device will be described withreference to FIGS. 12A to 12D and FIGS. 13A to 13D.

First, the insulating layer 102 is formed over the substrate 100. Then,an oxide semiconductor layer 106 is formed over the insulating layer 102(see FIG. 12A).

The substrate 100 may be any substrate that has an insulating surfaceand may be, for example, a glass substrate. The glass substrate ispreferably a non-alkali glass substrate. As a material of the non-alkaliglass substrate, a glass material such as aluminosilicate glass,aluminoborosilicate glass, barium borosilicate glass, or the like isused, for example. Alternatively, as the substrate 100, an insulatingsubstrate formed using an insulator such as a ceramic substrate, aquartz substrate, or a sapphire substrate, a semiconductor substratewhich is formed using a semiconductor material such as silicon and whosesurface is covered with an insulating material, or a conductivesubstrate which is formed using a conductor such as metal or stainlesssteel and whose surface is covered with an insulating material can beused.

The insulating layer 102 functions as a base and can be formed by a CVDmethod, a sputtering method, or the like. The insulating layer 102 ispreferably formed so as to include silicon oxide, silicon nitride,silicon oxynitride, silicon nitride oxide, aluminum oxide, hafniumoxide, tantalum oxide, or the like. Note that the insulating layer 102may have a single-layer structure or a stacked structure. There is noparticular limitation on the thickness of the insulating layer 102; theinsulating layer 102 can have a thickness of 10 nm to 500 nm, forexample. Here, the insulating layer 102 is not an essential component;therefore, a structure in which the insulating layer 102 is not providedis also possible.

If hydrogen, water, or the like is contained in the insulating layer102, hydrogen may enter the oxide semiconductor layer or extract oxygenfrom the oxide semiconductor layer, whereby characteristics of thetransistor may be degraded. Therefore, it is desirable to form theinsulating layer 102 so as to include as little hydrogen or water aspossible.

In the case of using a sputtering method or the like, for example, it isdesirable that the insulating layer 102 be formed in a state wheremoisture remaining in the treatment chamber is removed. In order toremove moisture remaining in the treatment chamber, an entrapment vacuumpump such as a cryopump, an ion pump, or a titanium sublimation pump ispreferably used. A turbo pump provided with a cold trap may be used.From the treatment chamber evacuated with a cryopump or the like,hydrogen, water, or the like is sufficiently removed; thus, theconcentration of an impurity in the insulating layer 102 can be reduced.

When the insulating layer 102 is formed, it is desirable to use ahigh-purity gas in which an impurity such as hydrogen or water isreduced to a concentration of approximately several parts per million(preferably several parts per billion).

The oxide semiconductor layer 106 can be formed using any of thefollowing materials: four-component metal oxide such as anIn—Sn—Ga—Zn—O-based material; three-component metal oxide such as anIn—Ga—Zn—O-based material, an In—Sn—Zn—O-based material, anIn—Al—Zn—O-based material, a Sn—Ga—Zn—O-based material, anAl—Ga—Zn—O-based material, and a Sn—Al—Zn—O-based material;two-component metal oxide such as an In—Zn—O-based material, aSn—Zn—O-based material, an Al—Zn—O-based material, a Zn—Mg—O-basedmaterial, a Sn—Mg—O-based material, and an In—Mg—O-based material;single-component metal oxide such as an In—O-based material, aSn—O-based material, and a Zn—O-based material; and the like.

In particular, an In—Ga—Zn—O-based oxide semiconductor material hassufficiently high resistance when there is no electric field and thusoff-state current can be sufficiently reduced. In addition, also havinghigh field-effect mobility, the In—Ga—Zn—O-based oxide semiconductormaterial is suitable for a semiconductor material used in asemiconductor device.

As a typical example of the In—Ga—Zn—O-based oxide semiconductormaterial, an oxide semiconductor material represented by InGaO₃(ZnO)_(m)(m>0) is given. Using M instead of Ga, there is an oxide semiconductormaterial represented by InMO₃(ZnO)_(m) (m>0). Here, M denotes one ormore metal elements selected from gallium (Ga), aluminum (Al), iron(Fe), nickel (Ni), manganese (Mn), cobalt (Co), and the like. Forexample, M may be Ga, Ga and Al, Ga and Fe, Ga and Ni, Ga and Mn, Ga andCo, or the like. Note that the above-described compositions are derivedfrom the crystal structures that the oxide semiconductor material canhave and are mere examples.

In this embodiment, as the oxide semiconductor layer 106, an amorphousoxide semiconductor layer is formed by a sputtering method using atarget for depositing an In—Ga—Zn—O-based oxide semiconductor.

As a target used for forming the oxide semiconductor layer 106 by asputtering method, a metal oxide target containing zinc oxide as itsmain component can be used, for example. Furthermore, a target fordepositing an oxide semiconductor including In, Ga, and Zn has acomposition ratio of In:Ga:Zn=1:x:y (x is greater than or equal to 0 andless than or equal to 2, and y is greater than or equal to 1 and lessthan or equal to 5). For example, a target having a composition ratio ofIn:Ga:Zn=1:1:1 [atomic ratio] (x=1, y=1) or a composition ratio ofIn₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio]) may be used. Furthermore, as atarget for depositing an oxide semiconductor, a target having acomposition ratio of In:Ga:Zn=1:1:0.5 [atomic ratio] or a compositionratio of In:Ga:Zn=1:1:2 [atomic ratio] or In:Ga:Zn=1:0:1 [atomic ratio](x=0, y=1) may be used. In this embodiment, heat treatment is performedlater in order to intentionally crystallize an oxide semiconductorlayer; thus, a target for depositing an oxide semiconductor with whichan oxide semiconductor layer which can easily be crystallized ispreferably used.

The relative density of an oxide semiconductor in a target fordepositing an oxide semiconductor is 80% or more, preferably 95% ormore, more preferably 99.9% or more. The use of a target for depositingan oxide semiconductor having high relative density makes it possible toform an oxide semiconductor layer with a dense structure.

The atmosphere in which the oxide semiconductor layer 106 is formed ispreferably a rare gas (typically, argon) atmosphere, an oxygenatmosphere, or a mixed atmosphere of a rare gas (typically, argon) andoxygen. Specifically, it is preferable to use a high-purity gasatmosphere, for example, from which an impurity such as hydrogen, water,a hydroxyl group, or hydride is removed to a concentration ofapproximately several parts per million (preferably, several parts perbillion).

In forming the oxide semiconductor layer 106, for example, the substrateis held in a treatment chamber that is maintained under reducedpressure, and the substrate is heated to a temperature of 100° C. to600° C., preferably 200° C. to 400° C. Then, a sputtering gas from whichhydrogen and water are removed is introduced into the treatment chamberfrom which remaining moisture is removed, and the oxide semiconductorlayer 106 is formed using metal oxide as a target. By forming the oxidesemiconductor layer 106 while heating the substrate, an impurity in theoxide semiconductor layer 106 can be reduced. Moreover, damage due tosputtering is reduced. In order to remove moisture remaining in thetreatment chamber, an entrapment vacuum pump is preferably used. Forexample, a cryopump, an ion pump, a titanium sublimation pump, or thelike can be used. A turbo pump provided with a cold trap may be used.From the treatment chamber evacuated with a cryopump or the like,hydrogen, water, or the like is sufficiently removed; therefore, theconcentration of an impurity in the oxide semiconductor layer 106 can bereduced.

For example, the conditions for forming the oxide semiconductor layer106 can be set as follows: the distance between the substrate and thetarget is 170 mm, the pressure is 0.4 Pa, the direct current (DC) poweris 0.5 kW, and the atmosphere is an oxygen (100% oxygen) atmosphere, anargon (100% argon) atmosphere, or a mixed atmosphere of oxygen andargon. Note that a pulsed direct current (DC) power source is preferablyused because dust (powder or flake-like substances formed at the time ofthe film formation) can be reduced and the film thickness can beuniform. The thickness of the oxide semiconductor layer 106 is set inthe range of 2 nm to 200 nm, preferably 5 nm to 30 nm. Note that theappropriate thickness of the oxide semiconductor layer 106 differsdepending on the oxide semiconductor material to be used, the intendeduse, or the like; therefore, the thickness may be determined asappropriate in accordance with the material, the intended use, or thelike.

Note that before the oxide semiconductor layer 106 is formed by asputtering method, reverse sputtering in which plasma is generated withan argon gas introduced is preferably performed so that a materialattached to the surface of the insulating layer 102 is removed. Here,the reverse sputtering is a method by which ions collide with a surfaceto be processed so that the surface is modified, in contrast to normalsputtering by which ions collide with a sputtering target. An example ofa method for making ions collide with a surface to be processed is amethod in which high-frequency voltage is applied to the surface side inan argon atmosphere so that plasma is generated near a substrate. Notethat an atmosphere of nitrogen, helium, oxygen, or the like may be usedinstead of an argon atmosphere.

Next, the oxide semiconductor layer 106 is processed by a method such asetching using a mask; thus, the oxide semiconductor layer 106 a havingan island shape is formed (see FIG. 12B).

As a method for etching the oxide semiconductor layer, either dryetching or wet etching may be employed. It is needless to say that dryetching and wet etching can be used in combination. The etchingconditions (e.g., an etching gas or an etchant, etching time, andtemperature) are set as appropriate depending on the material so thatthe oxide semiconductor layer can be etched into a desired shape.

As dry etching, a parallel plate reactive ion etching (RIE) method, aninductively coupled plasma (ICP) etching method, or the like can beused. Also in this case, etching conditions (e.g., the amount ofelectric power applied to a coiled electrode, the amount of electricpower applied to an electrode on the substrate side, and the electrodetemperature on the substrate side) need to be set as appropriate.

An example of an etching gas which can be used for dry etching is a gascontaining chlorine (a chlorine-based gas such as chlorine (Cl₂), borontrichloride (BCl₃), silicon tetrachloride (SiCl₄), or carbontetrachloride (CCl₄)). Moreover, a gas containing fluorine (afluorine-based gas such as carbon tetrafluoride (CF₄), sulfurhexafluoride (SF₆), nitrogen trifluoride (NF₃), or trifluoromethane(CHF₃)), hydrogen bromide (HBr), oxygen (O₂), any of these gases towhich a rare gas such as helium (He) or argon (Ar) is added, or the likemay be used.

An example of an etchant which can be used for wet etching includes amixed solution of phosphoric acid, acetic acid, and nitric acid, anammonia hydrogen peroxide mixture (hydrogen peroxide solution of 31 wt%:ammonia solution of 28 wt %:water=5:2:2), or the like. An etchant suchas ITO-07N (produced by KANTO CHEMICAL CO., INC.) may also be used.

After that, heat treatment (first heat treatment) is preferablyperformed on the oxide semiconductor layer 106 a. Water (including ahydroxyl group), hydrogen, or the like contained in the oxidesemiconductor layer 106 a can be removed by the first heat treatment.For example, the temperature of the first heat treatment can be sethigher than or equal to 300° C. and lower than 550° C., preferablyhigher than or equal to 400° C. and lower than 550° C. Note that thefirst heat treatment may double as second heat treatment (heat treatmentfor forming a crystalline region) to be performed later. In that case,the temperature of the heat treatment is preferably set higher than orequal to 550° C. and lower than or equal to 850° C.

For example, after the substrate 100 is introduced into an electricfurnace including a resistance heater or the like, the heat treatmentcan be performed at 450° C. for one hour in a nitrogen atmosphere. Theoxide semiconductor layer 106 a is not exposed to the air during theheat treatment so that entry of water or hydrogen can be prevented.

The heat treatment apparatus is not limited to the electric furnace andcan be an apparatus for heating an object to be processed by thermalradiation or thermal conduction from a medium such as a heated gas. Forexample, a rapid thermal annealing (RTA) apparatus such as a gas rapidthermal annealing (GRTA) apparatus or a lamp rapid thermal annealing(LRTA) apparatus can be used. An LRTA apparatus is an apparatus forheating an object to be processed by radiation of light (anelectromagnetic wave) emitted from a lamp such as a halogen lamp, ametal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressuresodium lamp, or a high pressure mercury lamp. A GRTA apparatus is anapparatus for performing heat treatment using a high-temperature gas. Asthe gas, an inert gas that does not react with an object to be processedby heat treatment, for example, nitrogen or a rare gas such as argon isused.

For example, as the first heat treatment, GRTA treatment may beperformed as follows. The substrate is put in an inert gas atmospherethat has been heated to a high temperature of 650° C. to 700° C., heatedfor several minutes, and taken out of the inert gas atmosphere. The GRTAtreatment enables high-temperature heat treatment in a short time.Moreover, the GRTA treatment can be employed even when the temperatureexceeds the upper temperature limit of the substrate because the heattreatment can be achieved in a short time. In the case where a glasssubstrate is used, shrinkage of the substrate becomes a problem at atemperature higher than the upper temperature limit (strain point) butdoes not in the case of performing heat treatment in a short time. Notethat the inert gas may be switched to a gas including oxygen during thetreatment. This is because defects caused by oxygen deficiency can bereduced by performing the first heat treatment in an atmosphereincluding oxygen.

Note that as the inert gas atmosphere, an atmosphere that containsnitrogen or a rare gas (e.g., helium, neon, or argon) as its maincomponent and does not contain water, hydrogen, or the like ispreferably used. For example, the purity of nitrogen or a rare gas suchas helium, neon, or argon introduced into a heat treatment apparatus isset to 6N (99.9999%) or more, preferably 7N (99.99999%) or more (i.e.,the impurity concentration is 1 ppm or less, preferably 0.1 ppm orless).

In any case, the transistor 150 with extremely excellent characteristicscan be obtained with the use of the oxide semiconductor layer 106 awhich is an i-type or substantially i-type oxide semiconductor layerobtained by removing an impurity through the first heat treatment.

Note that the first heat treatment can be performed on the oxidesemiconductor layer 106 that has not yet been processed into the oxidesemiconductor layer 106 a having an island shape. In that case, afterthe first heat treatment, the substrate 100 is taken out of the heatingapparatus and a photolithography step is performed.

The first heat treatment can also be referred to as dehydrationtreatment, dehydrogenation treatment, or the like because it has theeffect of removing hydrogen or water. The dehydration treatment ordehydrogenation treatment can be performed after the oxide semiconductorlayer is formed, after a source electrode layer and a drain electrodelayer are stacked over the oxide semiconductor layer 106 a, or after agate insulating layer is formed over the source electrode layer and thedrain electrode layer. Such dehydration treatment or dehydrogenationtreatment may be performed once or plural times.

Next, a conductive layer 108 is formed so as to be in contact with theoxide semiconductor layer 106 a (see FIG. 12C).

The conductive layer 108 can be formed by a PVD method such as asputtering method, or a CVD method such as a plasma CVD method. Theconductive layer 108 can be formed using an element selected fromaluminum, chromium, copper, tantalum, titanium, molybdenum, andtungsten, an alloy including any of these elements as a component, orthe like. A material including one or more of manganese, magnesium,zirconium, and beryllium may be used. A material including aluminum andone or more elements selected from titanium, tantalum, tungsten,molybdenum, chromium, neodymium, and scandium may be used.

The conductive layer 108 may also be formed using a conductive metaloxide. As the conductive metal oxide, indium oxide (In₂O₃), tin oxide(SnO₂), zinc oxide (ZnO), an indium oxide-tin oxide alloy (In₂O₃—SnO₂,which is abbreviated to ITO in some cases), an indium oxide-zinc oxidealloy (In₂O₃—ZnO), or any of these metal oxide materials in whichsilicon or silicon oxide is included can be used.

The conductive layer 108 may have a single-layer structure or a stackedstructure including two or more layers. For example, the conductivelayer 108 may have a three-layer structure in which an aluminum film isstacked over a titanium film and a titanium film is stacked over thealuminum film or a three-layer structure in which an aluminum film isstacked over a molybdenum film and a molybdenum film is stacked over thealuminum film. Alternatively, the conductive layer 108 can have atwo-layer structure in which an aluminum film and a tungsten film arestacked, a two-layer structure in which a copper film and a tungstenfilm are stacked, or a two-layer structure in which an aluminum film anda molybdenum film are stacked. It is needless to say that the conductivelayer 108 may have a single-layer structure or a stacked structureincluding four or more layers. In the case of a single-layer structure,a single-layer structure of a titanium film is preferable. With the useof a single-layer structure of a titanium film, later etching forforming a favorable tapered shape can be realized. Here, a three-layerstructure of a titanium film, an aluminum film, and a titanium film isemployed.

Note that a material having a low ability to extract oxygen (a materialhaving low oxygen affinity) may be used in a portion of the conductivelayer 108 which is in contact with the oxide semiconductor layer 106 a.As such a material, titanium nitride, tungsten nitride, platinum, or thelike can be given, for example. In a manner similar to the above, theconductive layer 108 may have either a single-layer structure or astacked structure. In the case of the conductive layer 108 having astacked structure, a two-layer structure of a titanium nitride film anda titanium film, a two-layer structure of a titanium nitride film and atungsten film, a two-layer structure of a titanium nitride film and acopper-molybdenum alloy film, a two-layer structure of a tantalumnitride film and a tungsten film, a two-layer structure of a tantalumnitride film and a copper film, a three-layer structure of a titaniumnitride film, a tungsten film, and a titanium film, or the like can beemployed, for example.

In the case where the material having a low ability to extract oxygen asdescribed above is used for the conductive layer 108, a change of theoxide semiconductor layer to an n-type due to extraction of oxygen canbe prevented; accordingly, an adverse effect on transistorcharacteristics caused by an uneven change to an n-type or the like canbe prevented.

In the case of using a material having a high barrier property, such asa titanium nitride film or a tantalum nitride film described above, in aportion of the conductive layer 108 which is in contact with the oxidesemiconductor layer 106 a, entry of an impurity into the oxidesemiconductor layer 106 a can be prevented and an adverse effect ontransistor characteristics can be reduced.

Next, the conductive layer 108 is selectively etched; thus, the sourceor drain electrode layer 108 a and the source or drain electrode layer108 b are formed (see FIG. 12D). Note that an insulating layer may beformed over the conductive layer 108, and the insulating layer may beetched; thus, an insulating layer having substantially the same shape asthe source or drain electrode layers may be formed over the source ordrain electrode layers. In that case, capacitance between the source ordrain electrode layers and the gate electrode layer (so-called gatecapacitance) can be reduced. Note that the expression “substantially thesame” or “substantially same” does not necessarily mean being exactlythe same in a strict sense and can mean being considered as the same.For example, a difference made by a single etching process isacceptable. Further, the thickness does not need to be the same.

For light exposure in forming a mask used for etching, ultravioletlight, KrF laser light, or ArF laser light is preferably used.Particularly for light exposure in the case where the channel length (L)is less than 25 nm, light exposure for forming a mask is preferablyperformed with extreme ultraviolet light whose wavelength is severalnanometers to several tens of nanometers, which is extremely short. Inlight exposure using extreme ultraviolet light, resolution is high anddepth of focus is large. Therefore, the channel length (L) of atransistor which is formed later can also be made to be 10 nm to 1000nm. By a decrease in channel length by such a method, operation speedcan be improved. In addition, the off-state current of a transistorincluding the above-described oxide semiconductor is small; thus, anincrease in power consumption due to miniaturization can be suppressed.

The materials and etching conditions of the conductive layer 108 and theoxide semiconductor layer 106 a are adjusted as appropriate so that theoxide semiconductor layer 106 a is not removed in etching of theconductive layer 108. Note that in some cases, the oxide semiconductorlayer 106 a is partly etched in the etching step and thus has a grooveportion (a depression portion) depending on the materials and theetching conditions.

In order to reduce the number of masks to be used and reduce the numberof steps, an etching step may be performed with the use of a resist maskformed using a multi-tone mask which is a light-exposure mask throughwhich light is transmitted to have a plurality of intensities. A resistmask formed with the use of a multi-tone mask has a plurality ofthicknesses (has a stair-like shape) and further can be changed in shapeby ashing; therefore, the resist mask can be used in a plurality ofetching steps. That is, a resist mask corresponding to at least twokinds of different patterns can be formed by using one multi-tone mask.Thus, the number of light-exposure masks can be reduced and the numberof corresponding photolithography steps can also be reduced, whereby aprocess can be simplified.

Next, heat treatment (second heat treatment) is performed on the oxidesemiconductor layer 106 a. By the second heat treatment, the crystallineregion 110 is formed in a region including a surface of the oxidesemiconductor layer 106 a (see FIG. 13A). Note that the range of thecrystalline region 110 varies depending on the material of the oxidesemiconductor layer 106 a, the conditions of the heat treatment, and thelike. For example, the crystalline region 110 can be formed to the lowerinterface of the oxide semiconductor layer 106 a.

For the second heat treatment, heat treatment similar to the first heattreatment can be employed. In other words, heat treatment using anelectric furnace, heat treatment using heat conduction from a mediumsuch as a heated gas, heat treatment using thermal radiation, or thelike can be employed.

Note that it is preferable that oxygen be not contained in a treatmentatmosphere. This is because oxidation of the source or drain electrodelayer 108 a and the like can be prevented when oxygen is not containedin a treatment atmosphere. As a specific atmosphere, an inert gas(nitrogen, a rare gas, or the like) in which hydrogen, water, or thelike is sufficiently reduced can be employed, for example. Thetemperature is set higher than or equal to 550° C. and lower than orequal to 850° C., preferably higher than or equal to 550° C. and lowerthan or equal to 750° C. This is because a favorable crystal can begrown by performing the second heat treatment at a relatively hightemperature.

Note that although the essential part of the invention does not requirea particular upper limit of the heat treatment temperature, in the casewhere the substrate 100 has low heat resistance, the upper limit of theheat treatment temperature needs to be lower than the allowabletemperature limit of the substrate 100.

In the case of employing GRTA treatment, the heat treatment period ispreferably 1 minute to 100 minutes long. For example, GRTA treatment ispreferably performed at 650° C. for approximately 3 minutes to 6minutes. By employing the above-described GRTA treatment, heat treatmentcan be performed in a short time; therefore, an adverse effect of heaton the substrate 100 can be reduced. That is, the upper limit of theheat treatment temperature can be increased in that case as compared tothe case where heat treatment is performed for a long time. In addition,the crystalline region 110 can be easily formed in the region includingthe surface of the oxide semiconductor layer 106 a.

In the second heat treatment, it is preferable that hydrogen (includingwater) or the like be not contained in a treatment atmosphere. Forexample, the purity of an inert gas which is introduced into a heattreatment apparatus is set to 6N (99.9999%, that is, an impurityconcentration is 1 ppm or lower) or more, preferably, 7N (99.99999%,that is, an impurity concentration is 0.1 ppm or lower) or more. Insteadof the inert gas, an oxygen gas in which hydrogen (including water) orthe like is sufficiently reduced, a N₂O gas, an ultra-dry air (with adew point of −40° C. or lower, preferably −60° C. or lower), or the likemay be used.

Note that the second heat treatment may be performed at any timing aslong as it is performed after the oxide semiconductor layer 106 isformed. Therefore, it is possible to perform heat treatment which servesas both the first heat treatment and the second heat treatment, forexample. In that case, either the first heat treatment or the secondheat treatment is performed. In addition, the second heat treatment maybe performed once or plural times.

In the crystalline region 110 formed in such a manner, a crystal in anoxide semiconductor is aligned such that its c-axis is in a directionsubstantially perpendicular to the surface of the oxide semiconductorlayer. Here, “substantially perpendicular” means being within ±10° froma perpendicular direction.

For example, in the case where an In—Ga—Zn—O-based oxide semiconductormaterial is used for the oxide semiconductor layer 106 a, thecrystalline region 110 can include a crystal represented byInGaO₃(ZnO)_(m) (m: an integer), a crystal represented by In₂Ga₂ZnO₇, orthe like. Owing to the second heat treatment, such a crystal is alignedsuch that its c-axis is in a direction substantially perpendicular tothe surface of the oxide semiconductor layer 106 a.

Here, the above-described crystal includes any of In, Ga, and Zn, andcan be considered to have a stacked structure of layers parallel toa-axis and b-axis. Specifically, the above-described crystal has astructure in which a layer including In and a layer not including In (alayer including Ga or Zn) are stacked in the c-axis direction.

In the In—Ga—Zn—O-based oxide semiconductor crystal, the conductivity ofthe layer including In in a direction parallel to a-axis and b-axis isfavorable. This is due to the fact that electrical conductivity ismainly controlled by In in the In—Ga—Zn—O-based oxide semiconductorcrystal and the fact that the 5s orbital of one In atom overlaps withthe 5s orbital of an adjacent In atom and thereby a carrier path isformed. In a direction perpendicular to the above-described layer (thatis, the c-axis direction), an insulating property is increased.

By including the crystalline region 110 as described above, the oxidesemiconductor layer 106 a can have electrical anisotropy. In theabove-described example, the electrical conductivity in a directionparallel to the surface of the oxide semiconductor layer 106 a isincreased, and the insulating property in a direction perpendicular tothe surface of the oxide semiconductor layer 106 a is increased.Therefore, with the use of the oxide semiconductor layer 106 a includingthe crystalline region 110 as described above, a semiconductor devicehaving favorable electrical characteristics can be realized.

Note that it is preferable that an amorphous structure or the likeremain below the crystalline region 110 because carriers flowing in thecrystalline region 110 can be prevented from being affected by theinterface with the insulating layer 102.

Next, the gate insulating layer 112 is formed in contact with part ofthe oxide semiconductor layer 106 a without exposure to the air (seeFIG. 13B). The gate insulating layer 112 can be formed by a CVD method,a sputtering method, or the like. The gate insulating layer 112 ispreferably formed so as to include silicon oxide, silicon nitride,silicon oxynitride, silicon nitride oxide, aluminum oxide, hafniumoxide, tantalum oxide, or the like. Note that the gate insulating layer112 may have a single-layer structure or a stacked structure. There isno particular limitation on the thickness of the gate insulating layer112; the gate insulating layer 112 can have a thickness of 10 nm to 500nm, for example.

Note that an i-type or substantially i-type oxide semiconductor obtainedby removing an impurity or the like (a purified oxide semiconductor) ishighly susceptible to interface states or interface charges; therefore,the gate insulating layer 112 needs to have high quality.

For example, a high-density plasma CVD method using a microwave (e.g.,2.45 GHz) is favorable in that the gate insulating layer 112 can bedense and have high withstand voltage and high quality. This is becausea close contact between a purified oxide semiconductor layer and ahigh-quality gate insulating layer reduces interface states and producesdesirable interface characteristics.

It is needless to say that another method such as a sputtering method ora plasma CVD method can also be employed as long as a high-qualityinsulating layer can be formed as the gate insulating layer 112.Moreover, it is possible to use an insulating layer whose quality,interface characteristics, or the like is improved with heat treatmentperformed after formation of the insulating layer. In any case, aninsulating layer that has a reduced interface state density and can forma favorable interface with an oxide semiconductor layer, as well ashaving favorable film quality as the gate insulating layer 112, isprovided.

By thus improving characteristics of the interface with the gateinsulating layer 112 and eliminating an impurity, particularly hydrogen,water, or the like, from an oxide semiconductor, it is possible toobtain a stable transistor whose threshold voltage (V_(th)) does notchange with a gate bias-temperature stress test (BT test, e.g., at 85°C. and 2×10⁶ V/cm for 12 hours).

After that, third heat treatment is preferably performed in an inert gasatmosphere or an oxygen atmosphere. The temperature of the heattreatment is set in the range of 200° C. to 400° C., preferably 250° C.to 350° C. For example, the heat treatment may be performed at 250° C.for 1 hour in a nitrogen atmosphere. The third heat treatment can reducevariation in electrical characteristics of the transistor. Further, bythe third heat treatment, oxygen can be supplied to the oxidesemiconductor layer 106 a. Note that in the case of aiming to supplyoxygen to the oxide semiconductor layer 106 a, it is preferably toperform the third heat treatment after a silicon oxide film is formed asthe gate insulating layer 112 by a sputtering method.

Note that the third heat treatment is performed in this embodiment afterthe gate insulating layer 112 is formed; there is no particularlimitation on the timing of the third heat treatment as long as it isperformed after the second heat treatment. In addition, the third heattreatment is not an essential step.

Next, the gate electrode layer 114 is formed over the gate insulatinglayer 112 in a region overlapping with the oxide semiconductor layer 106a (particularly in a region overlapping with the crystalline region 110)(see FIG. 13C). The gate electrode layer 114 can be formed by forming aconductive layer over the gate insulating layer 112 and then selectivelypatterning the conductive layer.

The conductive layer can be formed by a PVD method such as a sputteringmethod, or a CVD method such as a plasma CVD method. The conductivelayer can be formed using an element selected from aluminum, chromium,copper, tantalum, titanium, molybdenum, and tungsten, an alloy includingany of these elements as a component, or the like. A material includingone or more of manganese, magnesium, zirconium, and beryllium may beused. A material including aluminum and one or more elements selectedfrom titanium, tantalum, tungsten, molybdenum, chromium, neodymium, andscandium may be used.

The conductive layer may also be formed using a conductive metal oxide.As the conductive metal oxide, indium oxide (In₂O₃), tin oxide (SnO₂),zinc oxide (ZnO), an indium oxide-tin oxide alloy (In₂O₃—SnO₂, which isabbreviated to ITO in some cases), an indium oxide-zinc oxide alloy(In₂O₃—ZnO), or any of these metal oxide materials in which silicon orsilicon oxide is included can be used.

The conductive layer may have a single-layer structure or a stackedstructure including two or more layers. For example, the conductivelayer may have a single-layer structure of an aluminum film includingsilicon, a two-layer structure in which a titanium film is stacked overan aluminum film, or a three-layer structure in which a titanium film,an aluminum film, and a titanium film are stacked in this order. Here,the conductive layer is formed using a material including titanium andthen processed into the gate electrode layer 114.

Next, the interlayer insulating layer 116 and the interlayer insulatinglayer 118 are formed over the gate insulating layer 112 and the gateelectrode layer 114 (see FIG. 13D). The interlayer insulating layers 116and 118 can be formed by a PVD method, a CVD method, or the like. Theinterlayer insulating layers 116 and 118 can be formed using a materialincluding an inorganic insulating material such as silicon oxide,silicon nitride oxide, silicon nitride, hafnium oxide, aluminum oxide,or tantalum oxide. Note that a stacked structure of the interlayerinsulating layers 116 and 118 is used in this embodiment, but anembodiment of the disclosed invention is not limited to this example. Asingle-layer structure or a stacked structure including three or morelayers can also be used.

Note that the interlayer insulating layer 118 is desirably formed so asto have a flat surface. This is because an electrode, a wiring, or thelike can be favorably formed over the interlayer insulating layer 118when the interlayer insulating layer 118 is formed so as to have a flatsurface.

Through the above steps, the transistor 150 having the oxidesemiconductor layer 106 a including the crystalline region 110 iscompleted.

By the method described in this embodiment, the crystalline region 110can be formed in the oxide semiconductor layer 106 a; accordingly, asemiconductor device having favorable electrical characteristics can berealized.

By the method described in this embodiment, the hydrogen concentrationof the oxide semiconductor layer 106 a is 5×10¹⁹/cm³ or less and theoff-state current of the transistor is 1×10⁻¹³ A or less which is themeasurement limit. A semiconductor device with excellent characteristicscan be obtained with the use of the oxide semiconductor layer 106 awhich is purified by a sufficient reduction in hydrogen concentrationand by a supply of oxygen as described above.

As described above, the disclosed invention realizes a semiconductordevice with a novel structure and excellent characteristics.

Modified Examples

Next, modified examples of the semiconductor devices illustrated inFIGS. 1A and 1B, FIG. 2, FIG. 3, FIGS. 4A and 4B, FIGS. 5 to 11, FIGS.12A to 12D, and FIGS. 13A to 13D will be described with reference toFIGS. 14A to 14C, FIGS. 15A to 15C, and FIG. 16. Note that manycomponents of semiconductor devices illustrated in FIGS. 14A to 14C,FIGS. 15A to 15C, and FIG. 16 are similar to those of the semiconductordevices illustrated in FIGS. 1A and 1B, FIG. 2, FIG. 3, FIGS. 4A and 4B,FIGS. 5 to 11, FIGS. 12A to 12D, and FIGS. 13A to 13D; therefore, onlydifferent points will be described.

The transistor 150 illustrated in FIG. 14A includes the oxidesemiconductor layer 106 a having a depression portion (a grooveportion). Note that the depression portion is formed by etching at thetime of forming the source or drain electrode layer 108 a and the sourceor drain electrode layer 108 b. Accordingly, the depression portion isformed in a region overlapping with the gate electrode layer 114. Thedepression portion can reduce the thickness of the semiconductor layerin the channel formation region, thereby contributing to the preventionof a short-channel effect.

The transistor 150 illustrated in FIG. 14B includes an insulating layer109 a and an insulating layer 109 b which have substantially the sameshape as the source or drain electrode layer 108 a and the source ordrain electrode layer 108 b, over the source or drain electrode layer108 a and the source or drain electrode layer 108 b. In this case, thereis an advantage in that capacitance between the source or drainelectrode layers and the gate electrode layer (so-called gatecapacitance) can be reduced. Note that the expression “substantially thesame” or “substantially same” does not necessarily mean being exactlythe same in a strict sense and can mean being considered as the same.For example, a difference made by a single etching process isacceptable. Further, the thickness does not need to be the same.

The transistor 150 illustrated in FIG. 14C includes the oxidesemiconductor layer 106 a having a depression portion (a groove portion)and also includes an insulating layer 109 a and an insulating layer 109b which have substantially the same shape as the source or drainelectrode layer 108 a and the source or drain electrode layer 108 b,over the source or drain electrode layer 108 a and the source or drainelectrode layer 108 b. In other words, the transistor 150 illustrated inFIG. 14C has features of both the transistor 150 of FIG. 14A and thetransistor 150 of FIG. 14B. The effects resulting from the structure aresimilar to the effects obtained in the cases of FIG. 14A and FIG. 14B.

The transistor 150 illustrated in FIG. 15A includes a conductive layer107 a and a conductive layer 107 b formed of a material having a lowability to extract oxygen (a material having low oxygen affinity, suchas titanium nitride, tungsten nitride, or platinum) in a region wherethe source or drain electrode layer 108 a and the source or drainelectrode layer 108 b are in contact with the oxide semiconductor layer106 a. With such a conductive layer having a low ability to extractoxygen, a change of the oxide semiconductor layer to an n-type due toextraction of oxygen can be prevented; accordingly, an adverse effect ontransistor characteristics caused by an uneven change of the oxidesemiconductor layer to an n-type or the like can be prevented.

Note that the source or drain electrode layer 108 a and the source ordrain electrode layer 108 b having a two-layer structure are employed inFIG. 15A; however, an embodiment of the disclosed invention is notlimited to this structure. They may have a single-layer structure of aconductive layer formed of a material having a low ability to extractoxygen or a stacked structure including three or more layers. In thecase of a single-layer structure, a single-layer structure of a titaniumnitride film can be employed, for example. In the case of a stackedstructure, a two-layer structure of a titanium nitride film and atitanium film can be employed, for example.

The transistor 150 illustrated in FIG. 15B includes the oxidesemiconductor layer 106 a including the crystalline region 110 in theentire upper portion. In other words, the crystalline region 110 is moreextensive than in the cases of FIGS. 1A and 1B, FIG. 2, FIG. 3, FIGS. 4Aand 4B, FIGS. 5 to 11, FIGS. 12A to 12D, and FIGS. 13A to 13D. Thecrystalline region 110 is formed by heat treatment (first heattreatment) which is performed before formation of the conductive layer108. In that case, the first heat treatment doubles as the second heattreatment; thus, the second heat treatment may be omitted. In otherwords, the number of manufacturing steps can be reduced. In addition,the anisotropy of the oxide semiconductor layer 106 a can be furtherenhanced.

The transistor 150 illustrated in FIG. 15C includes a conductive layer107 a and a conductive layer 107 b formed of a material having a lowability to extract oxygen (a material having low oxygen affinity) in aregion where the source or drain electrode layer 108 a and the source ordrain electrode layer 108 b are in contact with the oxide semiconductorlayer 106 a, and also includes the oxide semiconductor layer 106 aincluding the crystalline region 110 in the entire upper portion. Inother words, the transistor 150 illustrated in FIG. 15C has features ofboth the transistor 150 of FIG. 15A and the transistor 150 of FIG. 15B.The effects resulting from the structure are similar to the effectsobtained in the cases of FIG. 15A and FIG. 15B.

FIG. 16 illustrates a modified example of a semiconductor device, whichincludes, in a lower portion, a transistor 250 including a materialother than an oxide semiconductor (e.g., silicon) and, in an upperportion, a transistor 150 including an oxide semiconductor. Thestructure of the transistor 150 including an oxide semiconductor issimilar to the transistor 150 illustrated in FIG. 1A.

The transistor 250 includes a channel formation region 216 provided in asubstrate 200 including a semiconductor material, impurity regions 214and high-concentration impurity regions 220 (these regions can becollectively referred to simply as impurity regions) provided such thatthe channel formation region 216 is sandwiched therebetween, a gateinsulating layer 208 a provided over the channel formation region 216, agate electrode layer 210 a provided over the gate insulating layer 208a, and a source or drain electrode layer 230 a and a source or drainelectrode layer 230 b electrically connected to the impurity regions 214(see FIG. 16). For example, a silicon substrate, an SOI substrate, orthe like can be used as the substrate 200 including a semiconductormaterial.

Here, a sidewall insulating layer 218 is formed on a side surface of thegate electrode layer 210 a. The high-concentration impurity regions 220are provided in regions of the substrate 200 which do not overlap withthe sidewall insulating layer 218 when seen from a directionperpendicular to a main surface of the substrate 200. Metal compoundregions 224 are provided in contact with the high-concentration impurityregions 220. An element isolation insulating layer 206 is provided overthe substrate 200 so as to surround the transistor 250. An interlayerinsulating layer 226 and an interlayer insulating layer 228 are providedso as to cover the transistor 250. The source or drain electrode layer230 a and the source or drain electrode layer 230 b are electricallyconnected to the metal compound regions 224 through openings formed inthe interlayer insulating layer 226, the interlayer insulating layer228, and an insulating layer 234. In other words, the source or drainelectrode layer 230 a and the source or drain electrode layer 230 b areelectrically connected to the high-concentration impurity regions 220and the impurity regions 214 through the metal compound regions 224.Note that the insulating layer 234 is preferably planarizedsufficiently. Specifically, the insulating layer 234 may be planarizedby chemical mechanical polishing (CMP) or the like such that thedifference in height becomes 3 nm or less, preferably 1 nm or less. Byforming the insulating layer 234 which is flat as described above, theplanarity of each component formed over the insulating layer 234 can beimproved.

The transistor 150 includes the oxide semiconductor layer 106 a(including the crystalline region 110) provided over the insulatinglayer 102, the source or drain electrode layer 108 a and the source ordrain electrode layer 108 b provided over the oxide semiconductor layer106 a and electrically connected to the oxide semiconductor layer 106 a,the gate insulating layer 112 provided so as to cover the oxidesemiconductor layer 106 a, the source or drain electrode layer 108 a,and the source or drain electrode layer 108 b, and the gate electrodelayer 114 provided over the gate insulating layer 112 in a regionoverlapping with the oxide semiconductor layer 106 a (see FIG. 16). Notethat it is preferable that the insulating layer 234 be sufficientlyplanarized as described above because surfaces of the insulating layer102 and the oxide semiconductor layer 106 a formed thereover can be madesignificantly flat. The crystallinity of a crystalline region formed inthe oxide semiconductor layer 106 a which is flat as described above canbe made excellent.

In addition, the interlayer insulating layer 116 and the interlayerinsulating layer 118 are provided over the transistor 150. Here,openings that reach the source or drain electrode layer 108 a and thesource or drain electrode layer 108 b are formed in the gate insulatinglayer 112, the interlayer insulating layer 116, and the interlayerinsulating layer 118. An electrode layer 254 d and an electrode layer254 e are formed in contact with the source or drain electrode layer 108a and the source or drain electrode layer 108 b, respectively, throughthe respective openings. Like the electrode layers 254 d and 254 e, anelectrode layer 254 a, an electrode layer 254 b, and an electrode layer254 c are formed in contact with an electrode layer 236 a, an electrodelayer 236 b, and an electrode layer 236 c, respectively, throughopenings provided in the insulating layer 102, the gate insulating layer112, the interlayer insulating layer 116, and the interlayer insulatinglayer 118.

An insulating layer 256 is provided over the interlayer insulating layer118. An electrode layer 258 a, an electrode layer 258 b, an electrodelayer 258 c, and an electrode layer 258 d are provided so as to beembedded in the insulating layer 256. Here, the electrode layer 258 a isin contact with the electrode layer 254 a. The electrode layer 258 b isin contact with the electrode layer 254 b. The electrode layer 258 c isin contact with the electrode layer 254 c and the electrode layer 254 d.The electrode layer 258 d is in contact with the electrode layer 254 e.

In other words, the source or drain electrode layer 108 a of thetransistor 150 is electrically connected to another element (such as thetransistor including a material other than an oxide semiconductor)through an electrode layer 230 c, the electrode layer 236 c, theelectrode layer 254 c, the electrode layer 258 c, and the electrodelayer 254 d (see FIG. 16). In addition, the source or drain electrodelayer 108 b of the transistor 150 is electrically connected to anotherelement through the electrode layer 254 e and the electrode layer 258 d.Note that the structure of connection electrodes (such as the electrodelayer 230 c, the electrode layer 236 c, the electrode layer 254 c, theelectrode layer 258 c, and the electrode layer 254 d) is not limited tothe above structure, and appropriate addition, omission, or the like ispossible.

It is preferable to use a material containing copper for part of theabove-described various electrodes (including wirings). In the case ofusing a material containing copper for part of electrodes and the like,conductivity of the electrodes and the like can be improved. Suchelectrodes and wirings can be formed by, for example, a method (aso-called damascene method) in which a barrier film (a titanium film, atitanium nitride film, or the like) is formed by a PVD method or a CVDmethod in an opening provided in an insulating layer and then a copperfilm is formed by a plating method, or the like.

As illustrated in FIG. 16, in an embodiment of the disclosed invention,an oxide semiconductor layer including a crystalline region can beformed over a given surface of a variety of substrates (a semiconductorsubstrate, an insulating substrate, or a metal substrate), insulatingfilms, semiconductor films, metal films, or the like. In other words, acrystalline oxide semiconductor layer can be formed with no difficultyover a substrate provided with an integrated circuit. Therefore,three-dimensional integration can be easily realized.

As described above, an embodiment of the disclosed invention can bemodified into various modes. In addition, a modified example is notlimited to the above example. For example, the structures of FIG. 14A,FIG. 14B, FIG. 14C, FIG. 15A, FIG. 15B, FIG. 15C, and FIG. 16 may becombined as appropriate as another modified example. It is needless tosay that addition, omission, and the like are possible within the scopeof the description in this specification or the like.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in other embodiments.

Embodiment 2

In this embodiment, semiconductor devices having structures differentfrom the semiconductor devices of the above embodiment, and amanufacturing method thereof will be described with reference to FIGS.17A and 17B, FIGS. 18A to 18C, FIGS. 19A to 19C, FIGS. 20A to 20D, FIGS.21A to 21C, and FIGS. 22A to 22C. Note that the structures described inthis embodiment are similar to the structures described in the aboveembodiment in many points; therefore, only different points will bemainly described below.

<Structure of Semiconductor Device>

FIGS. 17A and 17B are cross-sectional views each illustrating atransistor 150 which is an example of a structure of a semiconductordevice.

A point different from the structures of FIGS. 1A and 1B is that a gateelectrode layer 101 a is provided below the oxide semiconductor layer106 a. In other words, the transistor 150 illustrated in FIG. 17A or 17Bincludes a gate electrode layer 101 a over a substrate 100, aninsulating layer 102 covering the gate electrode layer 101 a, an oxidesemiconductor layer 106 a over the insulating layer 102, a crystallineregion 110 in the oxide semiconductor layer 106 a, a source or drainelectrode layer 108 a and a source or drain electrode layer 108 belectrically connected to the oxide semiconductor layer 106 a, a gateinsulating layer 112 covering the oxide semiconductor layer 106 a, thesource or drain electrode layer 108 a, and the source or drain electrodelayer 108 b, and a gate electrode layer 114 over the gate insulatinglayer 112 (see FIGS. 17A and 17B). Here, the insulating layer 102 alsofunctions as a gate insulating layer. In addition, FIG. 17A illustratesthe case where the source or drain electrode layer 108 a and the sourceor drain electrode layer 108 b have a stacked structure, and FIG. 17Billustrates the case where the source or drain electrode layer 108 a andthe source or drain electrode layer 108 b have a single-layer structure.Note that in the case of a single-layer structure, it is easy to realizea favorable tapered shape.

In a manner similar to the structures illustrated in FIGS. 1A and 1B,the oxide semiconductor layer 106 a includes the crystalline region 110.The region corresponds to a region including a surface of the oxidesemiconductor layer 106 a, in other words, a region including a portionin contact with the gate insulating layer 112.

In addition, an interlayer insulating layer 116 and an interlayerinsulating layer 118 are provided over the transistor 150. Note that theinterlayer insulating layer 116 and the interlayer insulating layer 118are not essential components and therefore may be omitted asappropriate.

The details of each component are omitted here, for which the aboveembodiment can be referred to.

As in the structures illustrated in FIGS. 17A and 17B, with the use ofthe oxide semiconductor layer 106 a which is purified and includes thecrystalline region 110, a semiconductor device having favorableelectrical characteristics can be realized.

In addition, the crystalline region 110 is stable as compared to theother region in the oxide semiconductor layer 106 a, and thus canprevent entry of an impurity (e.g., moisture or the like) into the oxidesemiconductor layer 106 a. Therefore, the reliability of the oxidesemiconductor layer 106 a can be improved.

Further, with the gate electrode layer 101 a which is a so-called backgate, electrical characteristics of the transistor 150 can be easilycontrolled. Note that a potential the same as or different from thatapplied to the gate electrode layer 114 may be applied to the gateelectrode layer 101 a. Alternatively, the gate electrode layer 101 a maybe in a floating state.

<Manufacturing Method of Semiconductor Device>

Next, a manufacturing method of the transistor 150 which is an exampleof a structure of a semiconductor device will be described withreference to FIGS. 18A to 18C, FIGS. 19A to 19C, and FIGS. 20A to 20D.

First, a conductive layer 101 is formed over the substrate 100 (see FIG.18A). The details of the substrate 100 are omitted here, for which theabove embodiment can be referred to.

The conductive layer 101 can be formed by a PVD method such as asputtering method, or a CVD method such as a plasma CVD method. Theconductive layer 101 can be formed using an element selected fromaluminum, chromium, copper, tantalum, titanium, molybdenum, andtungsten, an alloy including any of these elements as a component, orthe like. A material including one or more of manganese, magnesium,zirconium, and beryllium may be used. A material including aluminum andone or more elements selected from titanium, tantalum, tungsten,molybdenum, chromium, neodymium, and scandium may be used.

The conductive layer 101 may also be formed using a conductive metaloxide. As the conductive metal oxide, indium oxide (In₂O₃), tin oxide(SnO₂), zinc oxide (ZnO), an indium oxide-tin oxide alloy (In₂O₃—SnO₂,which is abbreviated to ITO in some cases), an indium oxide-zinc oxidealloy (In₂O₃—ZnO), or any of these metal oxide materials in whichsilicon or silicon oxide is included can be used.

The conductive layer 101 may have either a single-layer structure or astacked structure including two or more layers. In an embodiment of thedisclosed invention, since heat treatment at relatively high temperatureis performed after formation of the conductive layer 101, the conductivelayer 101 is preferably formed using a material having high heatresistance. As the material having high heat resistance, titanium,tantalum, tungsten, molybdenum, or the like can be given, for example.Polysilicon whose conductivity is increased by addition of an impurityelement or the like can also be used.

Next, the conductive layer 101 is selectively etched; thus, the gateelectrode layer 101 a is formed. Then, the insulating layer 102 isformed to cover the gate electrode layer 101 a (see FIG. 18B).

For light exposure in forming a mask used for etching, ultravioletlight, KrF laser light, or ArF laser light is preferably used.Particularly for light exposure in the case where the channel length (L)is less than 25 nm, light exposure for forming a mask is preferablyperformed with extreme ultraviolet light whose wavelength is severalnanometers to several tens of nanometers, which is extremely short. Inlight exposure using extreme ultraviolet light, resolution is high anddepth of focus is large, which are suitable for miniaturization.

The gate electrode layer 101 a is a so-called back gate. With the gateelectrode layer 101 a, electric field in the oxide semiconductor layer106 a can be controlled, whereby electrical characteristics of thetransistor 150 can be controlled. Note that the gate electrode layer 101a may be electrically connected to another wiring, electrode, or thelike so that a potential is applied to the gate electrode layer 101 a,or may be insulated so as to be in a floating state.

Note that a “gate electrode” commonly means a gate electrode whosepotential can be controlled intentionally; a “gate electrode” in thisspecification also means a gate electrode whose potential is notintentionally controlled. For example, the conductive layer which isinsulated and in a floating state as described above is, in some cases,called a “gate electrode layer.”

The insulating layer 102 functions as a base and also as a gateinsulating layer. The insulating layer 102 can be formed by a CVDmethod, a sputtering method, or the like. The insulating layer 102 ispreferably formed so as to include silicon oxide, silicon nitride,silicon oxynitride, silicon nitride oxide, aluminum oxide, hafniumoxide, tantalum oxide, or the like. Note that the insulating layer 102may have a single-layer structure or a stacked structure. There is noparticular limitation on the thickness of the insulating layer 102; theinsulating layer 102 can have a thickness of 10 nm to 500 nm, forexample.

If hydrogen, water, or the like is contained in the insulating layer102, hydrogen may enter the oxide semiconductor layer or extract oxygenfrom the oxide semiconductor layer, whereby characteristics of thetransistor may be degraded. Therefore, it is desirable to form theinsulating layer 102 so as to include as little hydrogen or water aspossible.

In the case of using a sputtering method or the like, for example, it isdesirable that the insulating layer 102 be formed in a state wheremoisture remaining in the treatment chamber is removed. In order toremove moisture remaining in the treatment chamber, an entrapment vacuumpump such as a cryopump, an ion pump, or a titanium sublimation pump ispreferably used. A turbo pump provided with a cold trap may be used.From the treatment chamber evacuated with a cryopump or the like,hydrogen, water, or the like is sufficiently removed; thus, theconcentration of an impurity in the insulating layer 102 can be reduced.

When the insulating layer 102 is formed, it is desirable to use ahigh-purity gas in which an impurity such as hydrogen or water isreduced to a concentration of approximately several parts per million(preferably several parts per billion).

Note that the insulating layer 102 needs to have high quality in amanner similar to the gate insulating layer 112. Therefore, theinsulating layer 102 is preferably formed by a method that can beemployed for the gate insulating layer 112. The details are omittedhere, for which the above embodiment can be referred to.

Next, an oxide semiconductor layer 106 is formed over the insulatinglayer 102 (see FIG. 18C). For also the details of the oxidesemiconductor layer 106, the above embodiment can be referred to.

Next, the oxide semiconductor layer 106 is processed by a method such asetching using a mask; thus, the oxide semiconductor layer 106 a havingan island shape is formed (see FIG. 19A). Here, it needs to be notedthat the oxide semiconductor layer 106 a is formed in the regionoverlapping with the gate electrode layer 101 a. For the details, theabove embodiment can be referred to.

After that, heat treatment (first heat treatment) is preferablyperformed on the oxide semiconductor layer 106 a. Water (including ahydroxyl group), hydrogen, or the like contained in the oxidesemiconductor layer 106 a can be removed by the first heat treatment.For example, the temperature of the first heat treatment can be sethigher than or equal to 300° C. and lower than 550° C., preferablyhigher than or equal to 400° C. and lower than 550° C. Note that thefirst heat treatment may double as second heat treatment (heat treatmentfor forming a crystalline region) to be performed later. In that case,the temperature of the heat treatment is preferably set higher than orequal to 550° C. and lower than or equal to 850° C. The details of theheat treatment are omitted here, for which the above embodiment can bereferred to.

Next, a conductive layer 108 is formed so as to be in contact with theoxide semiconductor layer 106 a (see FIG. 19B). Then, the conductivelayer 108 is selectively etched; thus, the source or drain electrodelayer 108 a and the source or drain electrode layer 108 b are formed(see FIG. 19C). For the details of the conductive layer 108, the sourceor drain electrode layer 108 a, the source or drain electrode layer 108b, the etching step, and the like, the above embodiment can be referredto.

Next, heat treatment (second heat treatment) is performed on the oxidesemiconductor layer 106 a. By the second heat treatment, the crystallineregion 110 is formed in a region including the surface of the oxidesemiconductor layer 106 a (see FIG. 20A). Note that the range of thecrystalline region 110 varies depending on the material of the oxidesemiconductor layer 106 a, the conditions of the heat treatment, and thelike. For example, the crystalline region 110 can be formed to the lowerinterface of the oxide semiconductor layer 106 a. For the details of thesecond heat treatment and the like, the above embodiment can be referredto.

Next, the gate insulating layer 112 is formed in contact with part ofthe oxide semiconductor layer 106 a without exposure to the air (seeFIG. 20B). After that, the gate electrode layer 114 is formed over thegate insulating layer 112 in a region overlapping with the oxidesemiconductor layer 106 a (particularly in a region overlapping with thecrystalline region 110) (see FIG. 20C). Then, the interlayer insulatinglayer 116 and the interlayer insulating layer 118 are formed over thegate insulating layer 112 and the gate electrode layer 114 (see FIG.20D). For the details of the above steps, the above embodiment can bereferred to.

By the method described in this embodiment, the crystalline region 110can be formed in the oxide semiconductor layer 106 a; accordingly, asemiconductor device having favorable electrical characteristics can berealized.

By the method described in this embodiment, the hydrogen concentrationof the oxide semiconductor layer 106 a is 5×10¹⁹/cm³ or less and theoff-state current of the transistor is 1×10⁻¹³ A or less which is themeasurement limit. A semiconductor device with excellent characteristicscan be obtained with the use of the oxide semiconductor layer 106 a thatis purified by a sufficient reduction in hydrogen concentration and by asupply of oxygen as described above.

Further, with the gate electrode layer serving as a so-called back gate,electrical characteristics of the semiconductor device can be easilycontrolled.

As described above, the disclosed invention realizes a semiconductordevice with a novel structure and excellent characteristics.

Modified Examples

Next, modified examples of the semiconductor devices illustrated inFIGS. 17A and 17B, FIGS. 18A to 18C, FIGS. 19A to 19C, and FIGS. 20A to20D will be described with reference to FIGS. 21A to 21C and FIGS. 22Ato 22C. Note that many components of the semiconductor devicesillustrated in FIGS. 21A to 21C and FIGS. 22A to 22C are similar tothose of the semiconductor devices illustrated in FIGS. 17A and 17B,FIGS. 18A to 18C, FIGS. 19A to 19C, and FIGS. 20A to 20D; therefore,only different points will be described.

The transistor 150 illustrated in FIG. 21A includes the oxidesemiconductor layer 106 a having a depression portion (a grooveportion). Note that the depression portion is formed by etching at thetime of forming the source or drain electrode layer 108 a and the sourceor drain electrode layer 108 b. Accordingly, the depression portion isformed in a region overlapping with the gate electrode layer 114. Thedepression portion can reduce the thickness of the semiconductor layerin the channel formation region, thereby contributing to the preventionof a short-channel effect.

The transistor 150 illustrated in FIG. 21B includes an insulating layer109 a and an insulating layer 109 b which have substantially the sameshape as the source or drain electrode layer 108 a and the source ordrain electrode layer 108 b, over the source or drain electrode layer108 a and the source or drain electrode layer 108 b. In this case, thereis an advantage in that capacitance between the source or drainelectrode layers and the gate electrode layer (so-called gatecapacitance) can be reduced. Note that the expression “substantially thesame” or “substantially same” does not necessarily mean being exactlythe same in a strict sense and can mean being considered as the same.For example, a difference made by a single etching process isacceptable. Further, the thickness does not need to be the same.

The transistor 150 illustrated in FIG. 21C includes the oxidesemiconductor layer 106 a having a depression portion (a groove portion)and also includes an insulating layer 109 a and an insulating layer 109b which have substantially the same shape as the source or drainelectrode layer 108 a and the source or drain electrode layer 108 b,over the source or drain electrode layer 108 a and the source or drainelectrode layer 108 b. In other words, the transistor 150 illustrated inFIG. 21C has features of both the transistor 150 of FIG. 21A and thetransistor 150 of FIG. 21B. The effects resulting from the structure aresimilar to the effects obtained in the cases of FIG. 21A and FIG. 21B.

The transistor 150 illustrated in FIG. 22A includes a conductive layer107 a and a conductive layer 107 b formed of a material having a lowability to extract oxygen (a material having low oxygen affinity, suchas titanium nitride, tungsten nitride, or platinum) in a region wherethe source or drain electrode layer 108 a and the source or drainelectrode layer 108 b are in contact with the oxide semiconductor layer106 a. With the conductive layers having a low ability to extract oxygenas described above, a change to an n-type due to extraction of oxygencan be prevented; accordingly, an adverse effect on transistorcharacteristics caused by an uneven change to an n-type or the like canbe prevented.

Note that the source or drain electrode layer 108 a and the source ordrain electrode layer 108 b having a two-layer structure are employed inFIG. 22A; however, an embodiment of the disclosed invention is notlimited to this structure. They may have a single-layer structure of aconductive layer formed of a material having a low ability to extractoxygen or a stacked structure including three or more layers. In thecase of a single-layer structure, a single-layer structure of a titaniumnitride film can be employed, for example. In the case of a stackedstructure, a two-layer structure of a titanium nitride film and atitanium film can be employed, for example.

The transistor 150 illustrated in FIG. 22B includes the oxidesemiconductor layer 106 a including the crystalline region 110 in theentire upper portion. In other words, the crystalline region 110 is moreextensive than in the case of FIGS. 17A and 17B, FIGS. 18A to 18C, FIGS.19A to 19C, and FIGS. 20A to 20D. The crystalline region 110 is formedby heat treatment (first heat treatment) which is performed beforeformation of the conductive layer 108. In that case, the first heattreatment doubles as the second heat treatment; thus, the second heattreatment may be omitted. In other words, the number of manufacturingsteps can be reduced. In addition, the anisotropy of the oxidesemiconductor layer 106 a can be further enhanced.

The transistor 150 illustrated in FIG. 22C includes a conductive layer107 a and a conductive layer 107 b formed of a material having a lowability to extract oxygen (a material having low oxygen affinity) in aregion where the source or drain electrode layer 108 a and the source ordrain electrode layer 108 b are in contact with the oxide semiconductorlayer 106 a, and also includes the oxide semiconductor layer 106 aincluding the crystalline region 110 in the entire upper portion. Inother words, the transistor 150 illustrated in FIG. 22C has features ofboth the transistor 150 of FIG. 22A and the transistor 150 of FIG. 22B.The effects resulting from the structure are similar to the effectsobtained in the cases of FIG. 22A and FIG. 22B.

In addition, as described in the above embodiment, a structure can alsobe employed, which includes, in a lower portion, a transistor 250including a material other than an oxide semiconductor (e.g., silicon)and, in an upper portion, a transistor 150 including an oxidesemiconductor (see FIG. 16). The structure of the transistor 150including an oxide semiconductor is similar to the transistors 150illustrated in FIGS. 17A and 17B and the like. For the details, theabove embodiment can be referred to.

As described above, an embodiment of the disclosed invention can bemodified into various modes. In addition, a modified example is notlimited to the above example. For example, the structures of FIG. 21A,FIG. 21B, FIG. 21C, FIG. 22A, FIG. 22B, FIG. 22C, and the like may becombined as appropriate as another modified example. It is needless tosay that addition, omission, and the like are possible within the scopeof the description in this specification or the like.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in other embodiments.

Embodiment 3

In this embodiment, examples of electronic devices each including thesemiconductor device according to any of the above-described embodimentswill be described with reference to FIGS. 23A to 23F. The semiconductordevice according to any of the above embodiments has unprecedentedexcellent characteristics. Therefore, an electronic device with a novelstructure can be provided by using the semiconductor device.

FIG. 23A illustrates a notebook personal computer including thesemiconductor device according to any of the above embodiments, andincludes a main body 301, a housing 302, a display portion 303, akeyboard 304, and the like. The semiconductor device according to thedisclosed invention is integrated, mounted on a circuit board or thelike, and incorporated in the housing 302. In addition, thesemiconductor device according to the disclosed invention can be appliedto the display portion 303. By applying the semiconductor deviceaccording to the disclosed invention to an integrated circuit board orthe like, high-speed circuit operation can be realized. Furthermore, byapplying the semiconductor device according to the disclosed inventionto the display portion 303, high-quality images can be displayed. Byapplying the semiconductor device according to the disclosed inventionto a personal computer as described above, a high-performance personalcomputer can be provided.

FIG. 23B illustrates a personal digital assistant (PDA) including thesemiconductor device according to any of the above embodiments. A mainbody 311 is provided with a display portion 313, an external interface315, operation buttons 314, and the like. Further, a stylus 312 isprovided as an accessory for operation. The semiconductor deviceaccording to the disclosed invention is integrated, mounted on a circuitboard or the like, and incorporated in the main body 311. In addition,the semiconductor device according to the disclosed invention can beapplied to the display portion 313. By applying the semiconductor deviceaccording to the disclosed invention to an integrated circuit board orthe like, high-speed circuit operation can be realized. Furthermore, byapplying the semiconductor device according to the disclosed inventionto the display portion 313, high-quality images can be displayed. Byapplying the semiconductor device according to the disclosed inventionto a personal digital assistant (PDA) as described above, ahigh-performance personal digital assistant (PDA) can be provided.

FIG. 23C illustrates an electronic book 320 as an example of electronicpaper including the semiconductor device according to any of the aboveembodiments. The electronic book 320 includes two housings, a housing321 and a housing 323. The housing 321 is combined with the housing 323by a hinge 337, so that the electronic book 320 can be opened and closedusing the hinge 337 as an axis. With such a structure, the electronicbook 320 can be used like a paper book.

The housing 321 includes a display portion 325, and the housing 323includes a display portion 327. The semiconductor device according tothe disclosed invention is integrated, mounted on a circuit board or thelike, and incorporated in the housing 323 or the housing 321. Thesemiconductor device according to the disclosed invention can be appliedto the display portion 327. The display portion 325 and the displayportion 327 can display a continuous image or different images. Astructure for displaying different images enables text to be displayedon the right display portion (the display portion 325 in FIG. 23C) andimages to be displayed on the left display portion (the display portion327 in FIG. 23C). By applying the semiconductor device according to thedisclosed invention to an integrated circuit board or the like,high-speed circuit operation can be realized. By applying thesemiconductor device according to the disclosed invention to the displayportion 327, high-quality images can be displayed.

FIG. 23C illustrates an example in which the housing 321 is providedwith an operation portion and the like. For example, the housing 321 isprovided with a power switch 331, operation keys 333, a speaker 335, andthe like. The operation keys 333 allow pages to be turned. Note that akeyboard, a pointing device, or the like may also be provided on thesame side of the housing as the display portion. Furthermore, anexternal connection terminal (an earphone terminal, a USB terminal, aterminal that can be connected to an AC adapter or various cables suchas a USB cable, or the like), a recording medium insertion portion, andthe like may be provided on the back surface or the side surface of thehousing. The electronic book 320 can also serve as an electronicdictionary.

In addition, the electronic book 320 can send and receive informationwirelessly. Through wireless communication, desired book data or thelike can be purchased and downloaded from an electronic book server.

Note that electronic paper can be used for electronic devices in allfields as long as they can display data. For example, to display data,electronic paper can be applied to posters, advertisement in vehiclessuch as trains, a variety of cards such as credit cards, and the like aswell as electronic books. By applying the semiconductor device accordingto the disclosed invention to electronic paper as described above,high-performance electronic paper can be provided.

FIG. 23D illustrates a cellular phone including the semiconductor deviceaccording to any of the above embodiments. The cellular phone includestwo housings, a housing 340 and a housing 341. The housing 341 includesa display panel 342, a speaker 343, a microphone 344, a pointing device346, a camera lens 347, an external connection terminal 348, and thelike. The housing 340 includes a solar cell 349 for charging thecellular phone, an external memory slot 350, and the like. An antenna isincorporated in the housing 341. The semiconductor device according tothe disclosed invention is integrated, mounted on a circuit board or thelike, and incorporated in the housing 340 or the housing 341.

The display panel 342 has a touch panel function. A plurality ofoperation keys 345 displayed as images are indicated by dashed lines inFIG. 23D. The semiconductor device according to the disclosed inventioncan be applied to the display panel 342. By applying the semiconductordevice according to the disclosed invention to the display panel 342,high-quality images can be displayed. Note that the cellular phoneincludes a booster circuit for increasing a voltage output from thesolar cell 349 to a voltage needed for each circuit. It is possible forthe cellular phone to have, in addition to the above structure, astructure in which a noncontact IC chip, a small recording device, orthe like is formed.

The display panel 342 changes the orientation of display as appropriatein accordance with the application mode. Further, the camera lens 347 isprovided on the same side as the display panel 342, so that the cellularphone can be used as a video phone. The speaker 343 and the microphone344 can be used for videophone calls, recording, and playing sound, etc.as well as voice calls. Moreover, the housings 340 and 341 in a statewhere they are developed as illustrated in FIG. 23D can be slid so thatone is lapped over the other. Therefore, the size of the cellular phonecan be reduced, which makes the cellular phone suitable for beingcarried around.

The external connection terminal 348 can be connected to an AC adapteror a variety of cables such as a USB cable, so that the cellular phonecan be charged or can perform data communication. Moreover, the cellularphone can store and transfer a larger amount of data by inserting arecording medium into the external memory slot 350. Further, in additionto the above functions, an infrared communication function, a televisionreception function, or the like may be provided. By applying thesemiconductor device according to the disclosed invention to a cellularphone, a high-performance cellular phone can be provided.

FIG. 23E illustrates a digital camera including the semiconductor deviceaccording to any of the above embodiments. The digital camera includes amain body 361, a display portion A 367, an eyepiece 363, an operationswitch 364, a display portion B 365, a battery 366, and the like. Thesemiconductor device according to the disclosed invention can be appliedto the display portion A 367 or the display portion B 365. By applyingthe semiconductor device according to the disclosed invention to thedisplay portion A 367 or the display portion B 365, high-quality imagescan be displayed. By applying the semiconductor device according to thedisclosed invention to a digital camera as described above, ahigh-performance digital camera can be provided.

FIG. 23F illustrates a television set including the semiconductor deviceaccording to any of the above embodiments. In a television set 370, adisplay portion 373 is incorporated in a housing 371. Images can bedisplayed on the display portion 373. Here, the housing 371 is supportedby a stand 375. By applying the semiconductor device according to thedisclosed invention to the display portion 373, high-speed operation ofa switching element can be achieved and an increase in the area of thedisplay portion 373 can be realized.

The television set 370 can be operated with an operation switch includedin the housing 371 or by a remote controller 380. Channels and volumecan be controlled with a control key 379 included in the remotecontroller 380, and images displayed on the display portion 373 can thusbe controlled. Further, the remote controller 380 can be provided with adisplay portion 377 for displaying data to be output from the remotecontroller 380.

Note that the television set 370 preferably includes a receiver, amodem, and the like. The receiver allows the television set 370 toreceive a general television broadcast. In addition, the television set370 is capable of one-way (from a transmitter to a receiver) or two-way(between a transmitter and a receiver, between receivers, or the like)data communication when connected to a communication network by wired orwireless connection via the modem. By applying the semiconductor deviceaccording to the disclosed invention to a television set as describedabove, a high-performance television set can be provided.

The structures, methods, and the like described in this embodiment canbe combined as appropriate with any of the structures, methods, and thelike described in other embodiments.

This application is based on Japanese Patent Application Serial No.2009-276334 filed with Japan Patent Office on Dec. 4, 2009, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A manufacturing method of a semiconductor device,comprising: forming an oxide semiconductor layer over an insulatingsurface; forming a conductive layer electrically connected to the oxidesemiconductor layer; forming a source electrode layer and a drainelectrode layer by etching the conductive layer; forming a crystallineregion in the oxide semiconductor layer by performing heat treatment toalign c-axis of the crystalline region in a direction substantiallyperpendicular to a surface of the oxide semiconductor layer; forming agate insulating layer over the oxide semiconductor layer and forming agate electrode layer over the gate insulating layer in a regionoverlapping with the crystalline region.
 2. The manufacturing method ofa semiconductor device according to claim 1, wherein the heat treatmentis performed at a temperature higher than or equal to 550° C. and lowerthan or equal to 850° C.
 3. The manufacturing method of a semiconductordevice according to claim 1, wherein a part of the oxide semiconductorlayer is removed when the conductive layer is etched.
 4. Themanufacturing method of a semiconductor device according to claim 1,further comprising a step of forming insulating layers havingsubstantially same shapes as the source electrode layer and the drainelectrode layer over the source electrode layer and the drain electrodelayer, respectively.
 5. The manufacturing method of a semiconductordevice according to claim 1, wherein a portion of the source electrodelayer and the drain electrode layer in contact with the oxidesemiconductor layer is formed using a material having low oxygenaffinity.
 6. The manufacturing method of a semiconductor deviceaccording to claim 1, wherein an oxide semiconductor layer having anamorphous structure is formed as the oxide semiconductor layer, and theamorphous structure remains in a region other than the crystallineregion.
 7. A manufacturing method of a semiconductor device, comprising:forming a first gate electrode layer over an insulating surface; forminga first gate insulating layer over the first gate electrode layer;forming an oxide semiconductor layer over the first gate insulatinglayer; forming a conductive layer electrically connected to the oxidesemiconductor layer; forming a source electrode layer and a drainelectrode layer by etching the conductive layer; forming a crystallineregion in the oxide semiconductor layer by performing heat treatment toalign c-axis of the crystalline region in a direction substantiallyperpendicular to a surface of the oxide semiconductor layer; forming asecond gate insulating layer over the oxide semiconductor layer; andforming a second gate electrode layer over the second gate insulatinglayer in a region overlapping with the crystalline region.
 8. Themanufacturing method of a semiconductor device according to claim 7,wherein the heat treatment is performed at a temperature higher than orequal to 550° C. and lower than or equal to 850° C.
 9. The manufacturingmethod of a semiconductor device according to claim 7, wherein a part ofthe oxide semiconductor layer is removed when the conductive layer isetched.
 10. The manufacturing method of a semiconductor device accordingto claim 7, further comprising a step of forming insulating layershaving substantially same shapes as the source electrode layer and thedrain electrode layer over the source electrode layer and the drainelectrode layer, respectively.
 11. The manufacturing method of asemiconductor device according to claim 7, wherein a portion of thesource electrode layer and the drain electrode layer in contact with theoxide semiconductor layer is formed using a material having low oxygenaffinity.
 12. The manufacturing method of a semiconductor deviceaccording to claim 7, wherein an oxide semiconductor layer having anamorphous structure is formed as the oxide semiconductor layer, and theamorphous structure remains in a region other than the crystallineregion.